On the Bipolar Resistive Switching Memory Using $...

IEEE Electron Device Letters 2013 / 03 Vol. 34; Iss. 3

On the Bipolar Resistive Switching Memory Using $ \hbox{TiN/Hf/HfO}_{2}/\hbox{Si}$ MIS Structure

Wu, Yung-Hsien, Wouters, Dirk J, Hendrickx, Paul, Zhang, Leqi, Chen, Yang Yin, Goux, Ludovic, Fantini, Andrea, Groeseneken, Guido, Jurczak, Malgorzata
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2013.2241726
Date:
March, 2013
File:
PDF, 321 KB
english, 2013
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