Temperature dependence of the Hooge parameter in n-channel...

IEEE Electron Device Letters 1985 / 10 Vol. 6; Iss. 10

Temperature dependence of the Hooge parameter in n-channel Silicon JFET's

Pawlikiewicz, A., van der Ziel, A.
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Volume:
6
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/edl.1985.26208
Date:
October, 1985
File:
PDF, 187 KB
english, 1985
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