Volume 6; Issue 10

IEEE Electron Device Letters

Volume 6; Issue 10

1

Measurement of the electron velocity-field characteristic in modulation-doped structures using the geometrical magnetoresistance method

Masselink, W.T., Kopp, W., Henderson, T., Morkoc, H.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 326 KB

english, 1985

2

An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT

Rosenberg, J.J., Benlamri, M., Kirchner, P.D., Woodall, J.M., Pettit, G.D.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 383 KB

english, 1985

3

Scaled performance for submicron GaAs MESFET's

Yokoyama, K., Tomizawa, M., Yoshii, A.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 319 KB

english, 1985

4

Millimeter-wave low-noise high electron mobility transistors

Chao, P.C., Palmateer, S.C., Smith, P.M., Mishra, U.K., Duh, K.H.G., Hwang, J.C.M.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 252 KB

english, 1985

5

Dependence of channel electric field on device scaling

Chan, T.Y., Ko, P.K., Hu, C.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 302 KB

english, 1985

6

Polycrystalline-silicon integrated photoconductors for picosecond pulsing and gating

Bowman, D.R., Hammond, R.B., Dutton, R.W.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 292 KB

english, 1985

7

Comparison of GaAs MESFET and GaAs p-i-n diodes as switch elements

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 192 KB

english, 1985

8

Alpha-particle induced charge transfer between closely spaced trench capacitor memory cells

Chern, J.H., Yang, P., Pattnaik, P., Seitchik, J.A., Weng, K.C.-K.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 228 KB

english, 1985

9

Gummel plot nonlinearities in polysilicon emitter transistors—Including negative differential resistance behavior

Yu, Z., Dutton, R.W.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 328 KB

english, 1985

10

Low-resistance ohmic contacts to p-type GaAs using Zn/Pd/Au metallization

Brooks, R.C., Chen, C.L., Chu, A., Mahoney, L.J., Mavroides, J.G., Manfra, M.J., Finn, M.C.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 336 KB

english, 1985

11

Heterojunction cathode contact transferred-electron oscillators

Friscourt, M.R., Rolland, P.A., Pernisek, M.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 319 KB

english, 1985

12

Emitter resistance of arsenic- and phosphorus-doped polysilicon emitter transistors

Chor, E.F., Ashburn, P., Brunnschweiler, A.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 316 KB

english, 1985

13

A new interpretation of the channel charge control mechanism in GaAs MESFET's

Shenai, K., Dutton, R.W.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 296 KB

english, 1985

14

A new self-aligned GaAs FET with a Mo/WSixT-gate

Suzuki, M., Kuriyama, Y., Hirayama, M.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 330 KB

english, 1985

15

Temperature dependence of the Hooge parameter in n-channel Silicon JFET's

Pawlikiewicz, A., van der Ziel, A.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 187 KB

english, 1985

16

Hot electrons and holes in MOSFET's biased below the Si—SiO2interfacial barrier

Sangiorgi, E., Ricco, B., Olivo, P.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 327 KB

english, 1985

17

Observation of double-hump substrate current in funnel-shape transistors

Huang, T.Y., Chen, J.Y.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 269 KB

english, 1985

18

On the storage time of InGaAs/InP bipolar transistors

Su, L.M., Mekonnen, G., Grote, N.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 275 KB

english, 1985

19

High-voltage bipolar mode JFET with normally off characteristics

Bellone, S., Caruso, A., Spirito, P., Vitale, G.F., Busatto, G., Cocorullo, G., Ferla, G., Musumeci, S.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 382 KB

english, 1985

20

Backgating characteristics of MODFET structures

Ezis, A., Langer, D.W.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 310 KB

english, 1985

21

Activation of polysilicon connections by selective CW laser annealing

Calder, I.D., Naguib, H.M.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 327 KB

english, 1985

22

Erratum

Journal:

IEEE Electron Device Letters

Year:

1985

File:

PDF, 29 KB

1985

23

Process and performance comparison of an 8K × 8-bit SRAM in three stacked CMOS technologies

Hite, L.R., Sundaresan, R., Malhi, S.D.S., Lam, H.W., Shah, A.H., Hester, R.K., Chatterjee, P.K.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 381 KB

english, 1985

24

An isolated MISS regenerative switching device

Chang, C.Y., Tzeng, F.C., Chen, C.T., Wang, S.J., Wang, Y.D.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 278 KB

english, 1985

25

Nonalloyed ohmic contacts to n-type GaAs by pulsed ruby laser diffused tin from tin-silica film

Kalkur, T.S., Nassibian, A.G., Rose, A.

Journal:

IEEE Electron Device Letters

Year:

1985

Language:

english

File:

PDF, 280 KB

english, 1985