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Volume 6; Issue 10
Main
IEEE Electron Device Letters
Volume 6; Issue 10
IEEE Electron Device Letters
Volume 6; Issue 10
1
Measurement of the electron velocity-field characteristic in modulation-doped structures using the geometrical magnetoresistance method
Masselink, W.T.
,
Kopp, W.
,
Henderson, T.
,
Morkoc, H.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 326 KB
Your tags:
english, 1985
2
An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT
Rosenberg, J.J.
,
Benlamri, M.
,
Kirchner, P.D.
,
Woodall, J.M.
,
Pettit, G.D.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 383 KB
Your tags:
english, 1985
3
Scaled performance for submicron GaAs MESFET's
Yokoyama, K.
,
Tomizawa, M.
,
Yoshii, A.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 319 KB
Your tags:
english, 1985
4
Millimeter-wave low-noise high electron mobility transistors
Chao, P.C.
,
Palmateer, S.C.
,
Smith, P.M.
,
Mishra, U.K.
,
Duh, K.H.G.
,
Hwang, J.C.M.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 252 KB
Your tags:
english, 1985
5
Dependence of channel electric field on device scaling
Chan, T.Y.
,
Ko, P.K.
,
Hu, C.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 302 KB
Your tags:
english, 1985
6
Polycrystalline-silicon integrated photoconductors for picosecond pulsing and gating
Bowman, D.R.
,
Hammond, R.B.
,
Dutton, R.W.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 292 KB
Your tags:
english, 1985
7
Comparison of GaAs MESFET and GaAs p-i-n diodes as switch elements
Gopinath, A.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 192 KB
Your tags:
english, 1985
8
Alpha-particle induced charge transfer between closely spaced trench capacitor memory cells
Chern, J.H.
,
Yang, P.
,
Pattnaik, P.
,
Seitchik, J.A.
,
Weng, K.C.-K.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 228 KB
Your tags:
english, 1985
9
Gummel plot nonlinearities in polysilicon emitter transistors—Including negative differential resistance behavior
Yu, Z.
,
Dutton, R.W.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 328 KB
Your tags:
english, 1985
10
Low-resistance ohmic contacts to p-type GaAs using Zn/Pd/Au metallization
Brooks, R.C.
,
Chen, C.L.
,
Chu, A.
,
Mahoney, L.J.
,
Mavroides, J.G.
,
Manfra, M.J.
,
Finn, M.C.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 336 KB
Your tags:
english, 1985
11
Heterojunction cathode contact transferred-electron oscillators
Friscourt, M.R.
,
Rolland, P.A.
,
Pernisek, M.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 319 KB
Your tags:
english, 1985
12
Emitter resistance of arsenic- and phosphorus-doped polysilicon emitter transistors
Chor, E.F.
,
Ashburn, P.
,
Brunnschweiler, A.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 316 KB
Your tags:
english, 1985
13
A new interpretation of the channel charge control mechanism in GaAs MESFET's
Shenai, K.
,
Dutton, R.W.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 296 KB
Your tags:
english, 1985
14
A new self-aligned GaAs FET with a Mo/WSixT-gate
Suzuki, M.
,
Kuriyama, Y.
,
Hirayama, M.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 330 KB
Your tags:
english, 1985
15
Temperature dependence of the Hooge parameter in n-channel Silicon JFET's
Pawlikiewicz, A.
,
van der Ziel, A.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 187 KB
Your tags:
english, 1985
16
Hot electrons and holes in MOSFET's biased below the Si—SiO2interfacial barrier
Sangiorgi, E.
,
Ricco, B.
,
Olivo, P.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 327 KB
Your tags:
english, 1985
17
Observation of double-hump substrate current in funnel-shape transistors
Huang, T.Y.
,
Chen, J.Y.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 269 KB
Your tags:
english, 1985
18
On the storage time of InGaAs/InP bipolar transistors
Su, L.M.
,
Mekonnen, G.
,
Grote, N.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 275 KB
Your tags:
english, 1985
19
High-voltage bipolar mode JFET with normally off characteristics
Bellone, S.
,
Caruso, A.
,
Spirito, P.
,
Vitale, G.F.
,
Busatto, G.
,
Cocorullo, G.
,
Ferla, G.
,
Musumeci, S.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 382 KB
Your tags:
english, 1985
20
Backgating characteristics of MODFET structures
Ezis, A.
,
Langer, D.W.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 310 KB
Your tags:
english, 1985
21
Activation of polysilicon connections by selective CW laser annealing
Calder, I.D.
,
Naguib, H.M.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 327 KB
Your tags:
english, 1985
22
Erratum
Smith, G.
Journal:
IEEE Electron Device Letters
Year:
1985
File:
PDF, 29 KB
Your tags:
1985
23
Process and performance comparison of an 8K × 8-bit SRAM in three stacked CMOS technologies
Hite, L.R.
,
Sundaresan, R.
,
Malhi, S.D.S.
,
Lam, H.W.
,
Shah, A.H.
,
Hester, R.K.
,
Chatterjee, P.K.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 381 KB
Your tags:
english, 1985
24
An isolated MISS regenerative switching device
Chang, C.Y.
,
Tzeng, F.C.
,
Chen, C.T.
,
Wang, S.J.
,
Wang, Y.D.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 278 KB
Your tags:
english, 1985
25
Nonalloyed ohmic contacts to n-type GaAs by pulsed ruby laser diffused tin from tin-silica film
Kalkur, T.S.
,
Nassibian, A.G.
,
Rose, A.
Journal:
IEEE Electron Device Letters
Year:
1985
Language:
english
File:
PDF, 280 KB
Your tags:
english, 1985
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