0.86-nm CET Gate Stacks With...

IEEE Electron Device Letters 2006 / 10 Vol. 27; Iss. 10

0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes

Gottlob, H.D.B., Echtermeyer, T., Schmidt, M., Mollenhauer, T., Efavi, J.K., Wahlbrink, T., Lemme, M.C., Czernohorsky, M., Bugiel, E., Fissel, A., Osten, H.J., Kurz, H.
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Volume:
27
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2006.882581
Date:
October, 2006
File:
PDF, 142 KB
english, 2006
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