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Volume 27; Issue 10
Main
IEEE Electron Device Letters
Volume 27; Issue 10
IEEE Electron Device Letters
Volume 27; Issue 10
1
Stochastic Matching Properties of FinFETs
Gustin, C.
,
Mercha, A.
,
Loo, J.
,
Subramanian, V.
,
Parvais, B.
,
Dehan, M.
,
Decoutere, S.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 145 KB
Your tags:
english, 2006
2
Reorganized Porous Silicon Bragg Reflectors for Thin-Film Silicon Solar Cells
F. Duerinckx
,
I. Kuzma-filipek
,
K. Van Nieuwenhuysen
,
G. Beaucarne
,
J. Poortmans
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 196 KB
Your tags:
english, 2006
3
430-V 12.4-$hboxmOmegacdot hboxcm^2$Normally off 4H-SiC Lateral JFET
M. Su
,
K. Sheng
,
Y. Li
,
Y. Zhang
,
J. Wu
,
J. Zhao
,
J. Zhang
,
L. Li
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 165 KB
Your tags:
english, 2006
4
Enhancement-Mode$hboxSi_3hboxN_4hbox/AlGaN/GaN$MISHFETs
R. Wang
,
Y. Cai
,
C. Tang
,
K. Lau
,
K. Chen
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 240 KB
Your tags:
english, 2006
5
NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics
Thareja, G.
,
Wen, H.C.
,
Harris, R.
,
Majhi, P.
,
Lee, B.H.
,
Lee, J.C.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 182 KB
Your tags:
english, 2006
6
Cost-Effective Integrated RF Power Transistor in 0.18-$muhboxm$CMOS Technology
Yan, T.
,
Liao, H.
,
Xiong, Y.Z.
,
Zeng, R.
,
Shi, J.
,
Huang, R.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 185 KB
Your tags:
english, 2006
7
Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology
Yang, R.
,
Loh, W.Y.
,
Yu, M.B.
,
Xiong, Y.-Z.
,
Choy, S.F.
,
Jiang, Y.
,
Chan, D.S.H.
,
Lim, Y.F.
,
Bera, L.K.
,
Wong, L.Y.
,
Li, W.H.
,
Du, A.Y.
,
Tung, C.H.
,
Hoe, K.M.
,
Lo, G.Q.
,
Balasubramanian, N.
,
Kwong, D.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 290 KB
Your tags:
english, 2006
8
Depth Profiling of Border Traps in MOSFET With High-$kappa$Gate Dielectric by Charge-Pumping Technique
Lu, C.-Y.
,
Chang-Liao, K.-S.
,
Tsai, P.-H.
,
Wang, T.-K.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 131 KB
Your tags:
english, 2006
9
Multichannel Carbon-Nanotube FETs and Complementary Logic Gates With Nanowelded Contacts
Chen, C.
,
Xu, D.
,
kong, E.S.
,
Zhang, Y.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 258 KB
Your tags:
english, 2006
10
Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates
Huang, W.
,
Khan, T.
,
Chow, T.P.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 120 KB
Your tags:
english, 2006
11
RF MEMS Oscillator with Integrated Resistive Transduction
Reichenbach, R.B.
,
Zalalutdinov, M.
,
Parpia, J.M.
,
Craighead, H.G.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 198 KB
Your tags:
english, 2006
12
0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes
Gottlob, H.D.B.
,
Echtermeyer, T.
,
Schmidt, M.
,
Mollenhauer, T.
,
Efavi, J.K.
,
Wahlbrink, T.
,
Lemme, M.C.
,
Czernohorsky, M.
,
Bugiel, E.
,
Fissel, A.
,
Osten, H.J.
,
Kurz, H.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 142 KB
Your tags:
english, 2006
13
An Assessment of the Location of As-Grown Electron Traps in$hboxHfO_2$/HfSiO Stacks
Zhang, J.F.
,
Zhao, C.Z.
,
Zahid, M.B.
,
Groeseneken, G.
,
Degraeve, R.
,
De Gendt, S.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 197 KB
Your tags:
english, 2006
14
Work-Function Tuning of TaN by High-Temperature Metal Intermixing Technique for Gate-First CMOS Process
Ren, C.
,
Chan, D.S.H.
,
Loh, W.Y.
,
Balakumar, S.
,
Du, A.Y.
,
Tung, C.H.
,
Lo, G.Q.
,
Kumar, R.
,
Balasubramanian, N.
,
Kwong, D.-L.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 220 KB
Your tags:
english, 2006
15
SET to RESET Programming in Phase Change Memories
Karpov, I.V.
,
Kostylev, S.A.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 114 KB
Your tags:
english, 2006
16
A New Poly-Si TFT Current-Mirror Pixel for Active Matrix Organic Light Emitting Diode
Lee, J.-H.
,
Nam, W.
,
Kim, B.-K.
,
Choi, H.-S.
,
Ha, Y.-M.
,
Han, M.-K.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 140 KB
Your tags:
english, 2006
17
Tunable Photodetector Based on GaAs/InP Wafer Bonding
Wang, W.
,
Ren, X.
,
Huang, H.
,
Wang, X.
,
Cui, H.
,
Miao, A.
,
Li, Y.
,
Huang, Y.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 256 KB
Your tags:
english, 2006
18
Corrections to “Device Linearity Comparison of Uniformly Doped and$delta$-Doped$hboxIn_0.52hboxAl_0.48hboxAs/hboxIn_0.6hboxGa_0.4hboxAs$Metamorphic HEMTs”
Lin, Y.C.
,
Chang, E.Y.
,
Yamaguchi, H.
,
Hirayama, Y.
,
Chang, X.Y.
,
Chang, C.Y.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 40 KB
Your tags:
english, 2006
19
Defect Passivation in Poly-Si TFTs by Ion Implantation and Pulsed Laser Annealing
Good, D.
,
Wickboldt, P.
,
Liu, T.-J.K.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 109 KB
Your tags:
english, 2006
20
Improvement in High-$k$$(hboxHfO_2/hboxSiO_2)$Reliability by Incorporation of Fluorine
Seo, K.
,
Sreenivasan, R.
,
Mcintyre, P.C.
,
Saraswat, K.C.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 117 KB
Your tags:
english, 2006
21
The Impact of Deep Ni Salicidation and$hboxNH_3$Plasma Treatment on Nano-SOI FinFETs
You, H.-C.
,
Kuo, P.-Y.
,
Ko, F.-H.
,
Chao, T.-S.
,
Lei, T.-F.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 321 KB
Your tags:
english, 2006
22
A Novel Bias Temperature Instability Characterization Methodology for High-$k$nMOSFETs
Heh, D.
,
Choi, R.
,
Young, C.D.
,
Lee, B.H.
,
Bersuker, G.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 108 KB
Your tags:
english, 2006
23
Design of CMOS Transistors to Maximize Circuit FOM Using a Coupled Process and Mixed-Mode Simulation Methodology
Venugopal, R.
,
Chakravarthi, S.
,
Chidambaram, P.R.
Journal:
IEEE Electron Device Letters
Year:
2006
Language:
english
File:
PDF, 112 KB
Your tags:
english, 2006
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