Gate current in self-aligned n-channel and p-channel...

IEEE Electron Device Letters 1991 / 10 Vol. 12; Iss. 10

Gate current in self-aligned n-channel and p-channel pseudomorphic heterostructure field-effect transistors

Schuermeyer, F.L., Shur, M., Grider, D.E.
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Volume:
12
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.119192
Date:
October, 1991
File:
PDF, 342 KB
english, 1991
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