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Volume 12; Issue 10
Main
IEEE Electron Device Letters
Volume 12; Issue 10
IEEE Electron Device Letters
Volume 12; Issue 10
1
1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As)
Warren, A.C.
,
Burroughes, J.H.
,
Woodall, J.M.
,
McInturff, D.T.
,
Hodgson, R.T.
,
Melloch, M.R.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 268 KB
Your tags:
english, 1991
2
Gate breakdown in MESFETs and HEMTs
Trew, R.J.
,
Mishra, U.K.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 366 KB
Your tags:
english, 1991
3
A single-piece C/sub infinity /-continuous MOSFET model including subthreshold conduction
McAndrew, C.C.
,
Bhattacharyya, B.K.
,
Wing, O.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 213 KB
Your tags:
english, 1991
4
Regenerative switching characteristics of a novel electrical or optical base-controlled AlGaAs/GaAs quantum-well heterojunction bipolar transistor
Tseng, H.C.
,
Li, S.S.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 352 KB
Your tags:
english, 1991
5
High-transconductance p-channel AlGaAs/GaAs HFETs with low-energy beryllium and fluorine co-implantation self-alignment
Kiehl, R.A.
,
Hallali, P.E.
,
Yates, J.
,
Tischler, M.A.
,
Potemski, R.M.
,
Cardone, F.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 321 KB
Your tags:
english, 1991
6
A variable-work-function polycrystalline-Si/sub 1-x/Ge/sub x/ gate material for submicrometer CMOS technologies
King, T.-J.
,
Pfiester, J.R.
,
Saraswat, K.C.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 304 KB
Your tags:
english, 1991
7
Comparison between the effects of positive noncatastrophic HBM ESD stress in n-channel and p-channel power MOSFETs
Zupac, D.
,
Baum, K.W.
,
Kosier, S.L.
,
Schrimpf, R.D.
,
Galloway, K.F.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 352 KB
Your tags:
english, 1991
8
Ultradry annealing after polysilicon electrode formation for improving the TDDB lifetime of ultrathin silicon oxide films in MOS diodes
Yamada, H.
,
Abe, M.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 270 KB
Your tags:
english, 1991
9
Demonstration of enhanced performance of an InP/InGaAs heterojunction phototransistor with a base terminal
Chandrasekhar, S.
,
Hoppe, M.K.
,
Dentai, A.G.
,
Joyner, C.H.
,
Qua, G.J.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 318 KB
Your tags:
english, 1991
10
Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates
Neudeck, P.G.
,
Carpenter, M.S.
,
Melloch, M.R.
,
Cooper, J.A.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 285 KB
Your tags:
english, 1991
11
26-GHz etched-groove silicon permeable base transistor
Gruhle, A.
,
Badoz, P.A.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 354 KB
Your tags:
english, 1991
12
New circuit model for RF probe pads and interconnections for the extraction of HBT equivalent circuits
Lee, S.
,
Gopinath, A.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 268 KB
Your tags:
english, 1991
13
Gate current in self-aligned n-channel and p-channel pseudomorphic heterostructure field-effect transistors
Schuermeyer, F.L.
,
Shur, M.
,
Grider, D.E.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 342 KB
Your tags:
english, 1991
14
New hot-carrier degradation mode in PMOSFETs with W gate electrodes
Matsuhashi, H.
,
Hayashi, T.
,
Nishikawa, S.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 281 KB
Your tags:
english, 1991
15
High-breakdown, high-gain InAlAs/InGaAsP quantum-well HEMTs
Hong, W.-P.
,
Bhat, R.
,
Hayes, J.R.
,
Nguyen, C.
,
Koza, M.
,
Chang, G.-K.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 289 KB
Your tags:
english, 1991
16
Transient behavior of subthreshold characteristics of fully depleted SOI MOSFETs
Assaderaghi, F.
,
Chen, J.
,
Solomon, R.
,
Chian, T.-Y.
,
Ko, P.K.
,
Hu, C.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 265 KB
Your tags:
english, 1991
17
The effect of biased spacers on LDD MOSFET behavior
Parrillo, L.C.
,
Pfiester, J.R.
,
Woo, M.P.
,
Roman, B.
,
Ray, W.
,
Ko, J.
,
Gunderson, C.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 307 KB
Your tags:
english, 1991
18
Recessed polysilicon encapsulated local oxidation
Cooper, K.J.
,
Roth, S.S.
,
Ray, W.
,
Kirsch, H.C.
,
Ko, J.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 394 KB
Your tags:
english, 1991
19
The role of an amorphous SiC:H 'buffer' in the high-performance mu c-SiC:H/a-SiC:H/poly-Si heterojunction solar cells
Hirata, G.A.
,
Nishimoto, T.
,
Matsumoto, Y.
,
Okamoto, H.
,
Hamakawa, Y.
,
Farias, M.H.
,
Cota-Araiza, L.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 279 KB
Your tags:
english, 1991
20
Modeling process latitude in UV projection lithography
Barouch, E.
,
Hollerbach, U.
,
Orszag, S.A.
,
Bradie, B.
,
Peckerar, M.
Journal:
IEEE Electron Device Letters
Year:
1991
Language:
english
File:
PDF, 272 KB
Your tags:
english, 1991
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