Volume 12; Issue 10

IEEE Electron Device Letters

Volume 12; Issue 10

1

1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As)

Warren, A.C., Burroughes, J.H., Woodall, J.M., McInturff, D.T., Hodgson, R.T., Melloch, M.R.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 268 KB

english, 1991

2

Gate breakdown in MESFETs and HEMTs

Trew, R.J., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 366 KB

english, 1991

3

A single-piece C/sub infinity /-continuous MOSFET model including subthreshold conduction

McAndrew, C.C., Bhattacharyya, B.K., Wing, O.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 213 KB

english, 1991

4

Regenerative switching characteristics of a novel electrical or optical base-controlled AlGaAs/GaAs quantum-well heterojunction bipolar transistor

Tseng, H.C., Li, S.S.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 352 KB

english, 1991

5

High-transconductance p-channel AlGaAs/GaAs HFETs with low-energy beryllium and fluorine co-implantation self-alignment

Kiehl, R.A., Hallali, P.E., Yates, J., Tischler, M.A., Potemski, R.M., Cardone, F.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 321 KB

english, 1991

6

A variable-work-function polycrystalline-Si/sub 1-x/Ge/sub x/ gate material for submicrometer CMOS technologies

King, T.-J., Pfiester, J.R., Saraswat, K.C.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 304 KB

english, 1991

7

Comparison between the effects of positive noncatastrophic HBM ESD stress in n-channel and p-channel power MOSFETs

Zupac, D., Baum, K.W., Kosier, S.L., Schrimpf, R.D., Galloway, K.F.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 352 KB

english, 1991

8

Ultradry annealing after polysilicon electrode formation for improving the TDDB lifetime of ultrathin silicon oxide films in MOS diodes

Yamada, H., Abe, M.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 270 KB

english, 1991

9

Demonstration of enhanced performance of an InP/InGaAs heterojunction phototransistor with a base terminal

Chandrasekhar, S., Hoppe, M.K., Dentai, A.G., Joyner, C.H., Qua, G.J.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 318 KB

english, 1991

10

Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates

Neudeck, P.G., Carpenter, M.S., Melloch, M.R., Cooper, J.A.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 285 KB

english, 1991

11

26-GHz etched-groove silicon permeable base transistor

Gruhle, A., Badoz, P.A.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 354 KB

english, 1991

12

New circuit model for RF probe pads and interconnections for the extraction of HBT equivalent circuits

Lee, S., Gopinath, A.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 268 KB

english, 1991

13

Gate current in self-aligned n-channel and p-channel pseudomorphic heterostructure field-effect transistors

Schuermeyer, F.L., Shur, M., Grider, D.E.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 342 KB

english, 1991

14

New hot-carrier degradation mode in PMOSFETs with W gate electrodes

Matsuhashi, H., Hayashi, T., Nishikawa, S.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 281 KB

english, 1991

15

High-breakdown, high-gain InAlAs/InGaAsP quantum-well HEMTs

Hong, W.-P., Bhat, R., Hayes, J.R., Nguyen, C., Koza, M., Chang, G.-K.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 289 KB

english, 1991

16

Transient behavior of subthreshold characteristics of fully depleted SOI MOSFETs

Assaderaghi, F., Chen, J., Solomon, R., Chian, T.-Y., Ko, P.K., Hu, C.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 265 KB

english, 1991

17

The effect of biased spacers on LDD MOSFET behavior

Parrillo, L.C., Pfiester, J.R., Woo, M.P., Roman, B., Ray, W., Ko, J., Gunderson, C.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 307 KB

english, 1991

18

Recessed polysilicon encapsulated local oxidation

Cooper, K.J., Roth, S.S., Ray, W., Kirsch, H.C., Ko, J.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 394 KB

english, 1991

19

The role of an amorphous SiC:H 'buffer' in the high-performance mu c-SiC:H/a-SiC:H/poly-Si heterojunction solar cells

Hirata, G.A., Nishimoto, T., Matsumoto, Y., Okamoto, H., Hamakawa, Y., Farias, M.H., Cota-Araiza, L.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 279 KB

english, 1991

20

Modeling process latitude in UV projection lithography

Barouch, E., Hollerbach, U., Orszag, S.A., Bradie, B., Peckerar, M.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 272 KB

english, 1991