On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
Westlinder, J., Schram, T., Pantisano, L., Cartier, E., Kerber, A., Lujan, G.S., Olsson, J., Groeseneken, G.Volume:
24
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2003.816579
Date:
September, 2003
File:
PDF, 250 KB
english, 2003