The Application of an Ultrathin ALD HfSiON Cap Layer on...

IEEE Electron Device Letters 2007 / 07 Vol. 28; Iss. 7

The Application of an Ultrathin ALD HfSiON Cap Layer on SiON Dielectrics for Ni-FUSI CMOS Technology Targeting at Low-Power Applications

Chang, S.Z., Yu, H.Y., Veloso, A., Lauwers, A., Delabie, A., Everaert, J-L., Kerner, C., Absil, P., Hoffmann, T., Biesemans, S.
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Volume:
28
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2007.899331
Date:
July, 2007
File:
PDF, 403 KB
english, 2007
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