850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure
D. A. Vinokurov,A. V. Lyutetskiy,D. N. Nikolaev,V. V. Shamakhov…Volume:
47
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782613080204
Date:
August, 2013
File:
PDF, 144 KB
english, 2013