Volume 47; Issue 8

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Semiconductors
Volume 47; Issue 8

Semiconductors

Volume 47; Issue 8

1

Features of defect formation during the growth of double heterostructures for injection lasers based on AlxGa1 −xAsySb1 −y/GaSb materials

Kuznetsov, G. F.

Journal:

Year:

2013

Language:

english

File:

PDF, 1.38 MB

english, 2013

2

Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures

Pastor, A. A., Prokhorova, U. V., Serdobintsev, P. Yu., Chaldyshev, V. V., Yagovkina, M. A.

Journal:

Year:

2013

Language:

english

File:

PDF, 263 KB

english, 2013

3

Study of the effect of the acid-base surface properties of ZnO, Fe2O3and ZnFe2O4oxides on their gas sensitivity to ethanol vapor

Karpova, S. S., Moshnikov, V. A., Maksimov, A. I., Mjakin, S. V., Kazantseva, N. E.

Journal:

Year:

2013

Language:

english

File:

PDF, 199 KB

english, 2013

4

Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals

A. Sh. Abdinov,R. F. Babayeva,S. I. Amirova,R. M. Rzayev

Journal:

Year:

2013

Language:

english

File:

PDF, 193 KB

english, 2013

5

Copolymers of carbazole- and indolocarbazole-containing phenylquinolines as new materials for electroluminescent devices

E. L. Aleksandrova,V. M. Svetlichnyi,T. N. Nekrasova,R. Yu. Smyslov…

Journal:

Year:

2013

Language:

english

File:

PDF, 352 KB

english, 2013

6

High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz

I. A. Andreev,O. Yu. Serebrennikova,G. S. Sokolovskii,V. V. Dudelev…

Journal:

Year:

2013

Language:

english

File:

PDF, 284 KB

english, 2013

7

(In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties

A. D. Bouravleuv,V. N. Nevedomskii,E. V. Ubyivovk,V. F. Sapega…

Journal:

Year:

2013

Language:

english

File:

PDF, 426 KB

english, 2013

8

Study of the properties of solar cells based ona-Si:Hp-i-nstructures by admittance spectroscopy

A. S. Gudovskikh,A. S. Abramov,A. V. Bobyl,V. N. Verbitskiy…

Journal:

Year:

2013

Language:

english

File:

PDF, 294 KB

english, 2013

9

Effect of annealing in argon on the properties of thermally deposited gallium-oxide films

V. M. Kalygina,V. V. Vishnikina,A. N. Zarubin,V. A. Novikov…

Journal:

Year:

2013

Language:

english

File:

PDF, 728 KB

english, 2013

10

Electrical phenomena in a metal/nanooxide/p+-silicon structure during its transformation to a resonant-tunneling diode

G. G. Kareva,M. I. Vexler

Journal:

Year:

2013

Language:

english

File:

PDF, 253 KB

english, 2013

11

Prospects for the pulsed electrodeposition of zinc-oxide hierarchical nanostructures

N. P. Klochko,Y. O. Myagchenko,E. E. Melnychuk,V. R. Kopach…

Journal:

Year:

2013

Language:

english

File:

PDF, 790 KB

english, 2013

12

Features of the stress-strain state of Si/SiO2/Ge heterostructures with germanium nanoislands of a limited density

V. V. Kuryliuk,O. A. Korotchenkov

Journal:

Year:

2013

Language:

english

File:

PDF, 216 KB

english, 2013

13

Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy

M. P. Mikhailova,I. A. Andreev,E. V. Ivanov,G. G. Konovalov…

Journal:

Year:

2013

Language:

english

File:

PDF, 207 KB

english, 2013

14

Optical properties of oxygen-implanted CdS:O layers in terms of band anticrossing theory

N. K. Morozova,A. A. Kanakhin,I. N. Miroshnikova,V. G. Galstyan

Journal:

Year:

2013

Language:

english

File:

PDF, 517 KB

english, 2013

15

X-ray and synchrotron studies of porous silicon

V. N. Sivkov,A. A. Lomov,A. L. Vasil’ev,S. V. Nekipelov,O. V. Petrova

Journal:

Year:

2013

Language:

english

File:

PDF, 517 KB

english, 2013

16

AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide

S. O. Slipchenko,A. A. Podoskin,D. A. Vinokurov,A. D. Bondarev…

Journal:

Year:

2013

Language:

english

File:

PDF, 155 KB

english, 2013

17

Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix

V. I. Ushanov,V. V. Chaldyshev,V. V. Preobrazhenskii,M. A. Putyato…

Journal:

Year:

2013

Language:

english

File:

PDF, 221 KB

english, 2013

18

850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure

D. A. Vinokurov,A. V. Lyutetskiy,D. N. Nikolaev,V. V. Shamakhov…

Journal:

Year:

2013

Language:

english

File:

PDF, 144 KB

english, 2013

19

Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation

N. A. Vlasenko,P. F. Oleksenko,M. A. Mukhlyo,L. I. Veligura

Journal:

Year:

2013

Language:

english

File:

PDF, 610 KB

english, 2013

20

Transient processes in high-voltage silicon carbide bipolar-junction transistors

V. S. Yuferev,M. E. Levinshtein,P. A. Ivanov,Q. J. Zhang…

Journal:

Year:

2013

Language:

english

File:

PDF, 231 KB

english, 2013

21

Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio

A. E. Zhukov,A. V. Savelyev,M. V. Maximov,N. V. Kryzhanovskaya…

Journal:

Year:

2013

Language:

english

File:

PDF, 222 KB

english, 2013