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Modelling of d.c. characteristics of heterojunction bipolar transistor processed with MBE or MOCVD techniques
J. Dangla, E. Caquot, C. Dubon, M. Campana, R. Azoulay, F. Alexandre, J. Lievin, J.F. Palmier, D. AnkriVolume:
129
Year:
1985
Language:
english
Pages:
5
DOI:
10.1016/0378-4363(85)90603-5
File:
PDF, 265 KB
english, 1985