Volume 129; Issue 1-3

Physica B+C

Volume 129; Issue 1-3
1

Editorial Board

Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 96 KB
english, 1985
2

Preface

J.P. Noblanc, J. Zimmermann
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 55 KB
english, 1985
3

Conference committees

Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 30 KB
english, 1985
4

MOSFET miniaturization — From one micron to the limits

Robert H. Dennard, Matthew R. Wordeman
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 804 KB
english, 1985
5

Technology and modeling for MOS IC/VLSI'S - state of the art -

Yoshio Nishi, Kenji Taniguchi, Jun'ichi Matsunaga
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 1006 KB
english, 1985
6

Discrete and integrated MOS power technologies

Pierre Rossel, Jean Buxo
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 1.30 MB
english, 1985
7

MOS isolation technology

W.G. Oldham, Y. Shacham-Diamand, P.L. Pai, K. Young, P. Sutardja
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 784 KB
english, 1985
8

Molecular beam epitaxy of III–V compounds

H. Künzel
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 801 KB
english, 1985
9

Chemical and structural characterisation of III–V epitaxial layers

M.J. Cardwell
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 723 KB
english, 1985
10

New heterojunction devices by band-gap engineering

Federico Capasso
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 733 KB
english, 1985
11

Lasers for integrated optoelectronics

Jean-Claude Bouley
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 649 KB
english, 1985
12

Status of the surface and bulk parasitic effects limiting the performances of GaAs IC's

Marc Rocchi
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 1.08 MB
english, 1985
13

Graphic display processor evolution

Jean-Pierre Pillou
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 1.45 MB
english, 1985
14

Liquid phase epitaxy of silicon: Potentials and prospects

D. Käss, M. Warth, H.P. Strunk, E. Bauser
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 542 KB
english, 1985
15

The observation of deep donor levels in epitaxially regrown implanted silicon

S.D. Brotherton, P. Bradley, A. Gill
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 257 KB
english, 1985
16

Electrical characterisation of oxygen implanted silicon substrates

D.J. Foster
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 248 KB
english, 1985
17

Three dimensional implantation profiles

David G. Ashworth, Mohamed Moulavi-Kakhki
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 397 KB
english, 1985
19

Two-dimensional coupled diffusion modeling

P. Pichler, W. Jüngling, S. Selberherr, H. Pötzl
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 294 KB
english, 1985
21

Characterization of TaSi2-films prepared by sputtering from compound targets

H. Gant, H. Boetticher, B. Kornetke, H.R. Deppe
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 285 KB
english, 1985
22

Platinum silicide shallow contacts for CMOS integrated circuits

P Maguire, B Armstrong, H Gamble, J Wakefield
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 253 KB
english, 1985
23

Formation of palladium and titanium silicides by rapid thermal annealing

D. Levy, J.P. Ponpon, A. Grob, J.J. Grob, P. Siffert
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 287 KB
english, 1985
27

Plasma assisted growth of thin oxynitride films

WK Graham, JC Alderman
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 253 KB
english, 1985
29

Characterisation and modelling of SIPOS on silicon planar devices

J.N. Sandoe, J.R. Hughes, J.A.G. Slatter
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 300 KB
english, 1985
30

Electron traps in B+-implanted SiO2

M. Offenberg, T. Johannson, M. Aslam, P. Balk
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 285 KB
english, 1985
33

Influence of Al-poly Si interactions on electrical properties of MOS capacitors

M. Dutoit, P. Weiss, J. Sanchez, M. Pfister, J.M. Moret
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 331 KB
english, 1985
34

A mixed technology high voltage process

MP Saunders, PE Holmes, BA Boxall
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 205 KB
english, 1985
35

Shallow source-drain structures for VLSI CMOS technology

AL Butler, DJ Foster
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 220 KB
english, 1985
36

Shallow junction source/drain regions in CMOS/VLSI technologies

K.J. Yallup, D.J. Godfrey
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 341 KB
english, 1985
38

The dispersion and instability of the work function difference in MOS structures

S.K. Krawczyk, T. Mrabeut
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 301 KB
english, 1985
39

Temperature and doping dependence of the fundamental surface recombination velocity

M. Ghannam, R. Mertens, R. De Keersmaecker
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 156 KB
english, 1985
40

Safe operating area of the MOS'T : Second breakdown limitations

H. Tranduc, P. Rossel, J.L. Sanchez
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 262 KB
english, 1985
41

An optimized 0.3 μm N-MOS transistor

G. Guegan, J. Gautier, M. Guerin, B. Dal'Zotto, F. Buiguez
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 309 KB
english, 1985
42

Simulation of deep depleted SOI MOSFET's with back potential control

Francis Balestra, Jean Brini, Pierre Gentil
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 246 KB
english, 1985
45

Influence of process parameters on reverse currents of emitter/base junctions

S. Beck, D. Hagmann, E. Tomann
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 293 KB
english, 1985
47

Buried recombination layers with enhanced n-type conductivity for silicon power devices

Wolfgang Wondrak, Dieter Silber
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 215 KB
english, 1985
48

A new formulation of the early effect in lateral PNP transistors

Márcio Cherem Schneider, Jean Albert Bodinaud
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 235 KB
english, 1985
50

Quasi-two-dimensional simulations of bipolar silicon power transistors

Wolf-Dieter Nowak, Heinrich Schlangenotto
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 256 KB
english, 1985
51

Hydrogenated amorphous-silicon bipolar transistors

Yasuo Nara, Masakiyo Matsumura
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 193 KB
english, 1985
52

Totally light controlled static induction thyristor

Jun-ichi Nishizawa, Takashige Tamamushi, Ken-ichi Nonaka
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 372 KB
english, 1985
53

Negative capacitance in switching MISS devices

J. Millán, V. Villaronga, J.R. Morante, F. Serra-Mestres, A. Herms
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 226 KB
english, 1985
54

Ether: A software simulating the electrical behaviour of heterostructure devices

E. Caquot, J. Dangla, M. Campana, D. Ankri, J.F. Palmier
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 283 KB
english, 1985
57

12 GHz low noise and low cost GaAs FET's for home use

Tsuneyoshi Aoki, Masayoshi Kanazawa, Kaoru Suzuki, Seiichi Watanabe
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 337 KB
english, 1985
60

Study of two-dimensional gas transport properties: An approach to electron transport in TEGFETs

J. Zimmermann, Wu Yen, F. Perri
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 277 KB
english, 1985
62

New aspects of the power limitations in the GaAs MESFETs

Yves Crosnier, Georges Salmer, Henri Gerard, Jacques Wyrwinski, Pierre Baudet
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 217 KB
english, 1985
63

High transconductance InP MISFET'S with double layer gate insulator

P. Dimitriou, G. Post, A. Scavennec, N. Duhamel, M. Lorans
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 248 KB
english, 1985
65

Epitaxial growth and assessment of p-type GaAs by chloride VPE

I.H. Goodridge, P.M. Edwardson
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 279 KB
english, 1985
68

Transient capacitance spectroscopy in heavily compensated materials

D. Stievenard, M. Lannoo, J.C. Bourgoin
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 187 KB
english, 1985
70

TiW silicide-gate technology for self-aligned GaAs FET

SS Gill, GJ Pryce, J Woodward
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 269 KB
english, 1985
71

Annealing effects in silicon nitride encapsulant films

Roy Szweda
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 260 KB
english, 1985
72

Transient annealing for the production of n+ contact layers in GaAs

Russell Gwilliam, Rachid Bensalem, Brian Sealy, Kenneth Stephens
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 270 KB
english, 1985
74

Optical measurement of gain coefficients in Ga0.47In0.53As

E. Zielinski, S. Hausser, H. Eisele, H. Schweizer, M.H. Pilkuhn
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 261 KB
english, 1985
75

High power performance of double channel mesa laser

A. Collar, D. Renner, P.D. Greene, D. Moule, B. Butler
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 226 KB
english, 1985
76

GaAsAlGaAs MQW and GRINSCH lasers grown by molecular beam epitaxy

G. Weimann, W. Schlapp
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 308 KB
english, 1985
77

Short wavelength (visible) quantum well lasers grown by molecular beam epitaxy

P. Blood, E.D. Fletcher, K. Woodbridge, P.J. Hulyer
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 228 KB
english, 1985
79

Dark current processes in InP/GaInAs heterostructure APDs

R.S. Sussmann, R.M. Ash, A. Murphy, K.L. Monham
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 266 KB
english, 1985
81

A new GaAs photodetector in the 0.8 – 1.4 μ wavelength range

Y. Horikoshi, K. Ploog
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 304 KB
english, 1985
82

III–V photoconductive detectors : Gain and noise studies

Jean Pierre Vilcot, Monique Constant, Didier Decoster, Renaud Fauquembergue
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 264 KB
english, 1985
83

Sensitivity improvement for fast GaAs photoconductive detectors

D. Pascal, C. Bru, F. Hobar-Boudebous, S. Laval
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 222 KB
english, 1985
84

Diffused GaSb photodiode in planar technology

W. Schmidt auf Altenstadt, C. Heinz
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 208 KB
english, 1985
85

The BARITT diode — A low noise heterodyne photodetector with high integral gain

D. Jäger, P. Paulus, R. Heidemann
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 304 KB
english, 1985
86

MIS-structures as memories for optical information

Olof Engström, Karl-Henrik Ryden
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 322 KB
english, 1985
89

A CCD on GaAs

A.J. Hayes, W. Eccleston
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 188 KB
english, 1985
90

Determination of transport coefficients by transient photoconductivity measurements

D. Gasquet, J.P. Nougier, G. Gineste
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 134 KB
english, 1985
92

Effect of electron-electron and electron-plasmon interactions on hot carrier transport in semiconductors

P. Lugli, D.K. Ferry
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 278 KB
english, 1985
93

Transport in silicon monolithic hot electron structures

D.C. Herbert, M.J. Kirton
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 245 KB
english, 1985
96

A Monte Carlo particle model of hot electron injection

C. Moglestue
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 263 KB
english, 1985
97

2-D particle modelling of the InP misfet and comparison with Si MOSFET

M. Mouis, J.F. Pône, J.P. Courat, R. Castagné
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 301 KB
english, 1985
98

Two dimensional Monte Carlo simulation of an injection modulated M.I.S.F.E.T. structure

R. Fauquembergue, M. Pernisek, E. Constant
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 223 KB
english, 1985
99

2-D numerical simulation of the charge transfer in GaAs B.C.C.D.'s in the GHz range

D. Sodini, A. Touboul, D. Rigaud, J. Godin
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 263 KB
english, 1985
100

Noise in Permeable Base Transistors (PBTs)

X.C. Zhu, X.N. Zhang, A. van der Ziel, A. Pawlikiewicz
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 227 KB
english, 1985
101

Quantum 1/f noise phenomena in semiconductor noise

A. van der Ziel, P.H. Handel
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 100 KB
english, 1985
102

Method for modeling the noise of submicron devices

J.P. Nougier, C. Gontrand, J.C. Vaissiere
Journal:
Physica B+C
Year:
1985
Language:
english
File:
PDF, 134 KB
english, 1985
103

List of contributors

Journal:
Physica B+C
Year:
1985
File:
PDF, 119 KB
1985