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High resolution capacitance spectroscopy of LPE In0.53Ga0.47As grown on Fe doped InP-substrate and VPE GaAs grown on Cr-doped GaAs-substrate
K.-A. Brauchle, D. Bimberg, K.-H. Goetz, H. Jürgensen, J. SeldersVolume:
129
Year:
1985
Language:
english
Pages:
4
DOI:
10.1016/0378-4363(85)90616-3
File:
PDF, 216 KB
english, 1985