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The characterisation of GaAs NiAuGe ohmic contacts alloyed with an SiO2 overlayer for use in an ion implanted MESFET technology
David A Allan, Stuart C ThorpVolume:
129
Year:
1985
Language:
english
Pages:
5
DOI:
10.1016/0378-4363(85)90620-5
File:
PDF, 361 KB
english, 1985