Multifunction Behavior of a Vertical MOSFET With Trench...

IEEE Transactions on Electron Devices 2014 / 9 Vol. 61; Iss. 9

Multifunction Behavior of a Vertical MOSFET With Trench Body Structure and New Erase Mechanism for Use in 1T-DRAM

Lin, Jyi-Tsong, Lin, Po-Hsieh
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2014.2336533
Date:
September, 2014
File:
PDF, 2.22 MB
english, 2014
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