High-efficiency 0.25- mu m gate-length pseudomorphic power...

IEEE Transactions on Electron Devices 1989 / Nov. Vol. 36; Iss. 11

High-efficiency 0.25- mu m gate-length pseudomorphic power heterostructure FETs at millimeter-wave frequencies

Lester, L.F., Kao, M.-Y., Ho, P., Ferguson, D.W., Smith, R.P., Smith, P.M., Ballingall, J.M.
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Volume:
36
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/16.43730
Date:
January, 1989
File:
PDF, 295 KB
english, 1989
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