Gate-Induced Drain-Leakage (GIDL) Programming Method for...

IEEE Electron Device Letters 2009 / 02 Vol. 30; Iss. 2

Gate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (URAM)

Jin-Woo Han,, Seong-Wan Ryu,, Sung-Jin Choi,, Yang-Kyu Choi,
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.2010345
Date:
February, 2009
File:
PDF, 396 KB
english, 2009
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