Volume 30; Issue 2

IEEE Electron Device Letters

Volume 30; Issue 2

1

Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device

Banerjee, S.K., Register, L.F., Tutuc, E., Reddy, D., MacDonald, A.H.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 127 KB

english, 2009

2

N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

Chung, J.W., Piner, E.L., Palacios, T.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 374 KB

english, 2009

3

High-Performance 0.1-$\mu\hbox{m}$ Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz

Haifeng Sun,, Alt, A.R., Benedickter, H., Bolognesi, C.R.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 443 KB

english, 2009

4

The Electrical and Interfacial Properties of Metal-High-$\kappa$ Oxide-Semiconductor Field-Effect Transistors With $\hbox{LaAlO}_{3}$ Gate Dielectric

Chang, I.Y.-K., Sheng-Wen You,, Pi-Chun Juan,, Ming-Tsong Wang,, Lee, J.Y.-M.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 204 KB

english, 2009

5

Characteristics of Gate-All-Around Twin Poly-Si Nanowire Thin-Film Transistors

Jeng-tzong Sheu, Po-chun Huang, Tzu-shiun Sheu, Chen-chia Chen, Lu-an Chen

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 423 KB

english, 2009

6

Direct Field Effect of Neighboring Cell Transistor on Cell-to-Cell Interference of nand Flash Cell Arrays

Mincheol Park, Keonsoo Kim, Jong-ho Park, Jeong-hyuck Choi

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 372 KB

english, 2009

7

Characterization of Polymetal Gate Transistors With Low-Temperature Atomic-Layer-Deposition-Grown Oxide Spacer

Ga-won Lee, Hi-duck Lee, Kwan-yong Lim, Yong Soo Kim, Hong-sun Yang, Gyu-seog Cho, Sung-kye Park, Sung-joo Hong

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 439 KB

english, 2009

8

A 10-kV Monolithic Darlington Transistor With $\beta_{ \rm forced}$ of 336 in 4H-SiC

Qingchun Zhang, C. Jonas, M. O'loughlin, R. Callanan, A. Agarwal, C. Scozzie

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 170 KB

english, 2009

9

Silane–Ammonia Surface Passivation for Gallium Arsenide Surface-Channel n-MOSFETs

Hock-chun Chin, Ming Zhu, Xinke Liu, Hock-koon Lee, Luping Shi, Leng-seow Tan, Yee-chia Yeo

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 402 KB

english, 2009

10

Meneghesso, G., Zanon, F., Uren, M.J., Zanoni, E.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 116 KB

english, 2009

11

Oscillatory Transmission Line Pulsing for Characterization of Device Transient Response

Di Sarro, J.P., Rosenbaum, E.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 427 KB

english, 2009

12

-State Resistance Reduction by STI Fingers in LDMOSFET

Ru-Yi Su,, Chiang, P.Y., Jeng Gong,, Tsung-Yi Huang,, Tsai, C.L., Chou, C.C., Liu, C.M.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 418 KB

english, 2009

13

RF Noise of 65-nm MOSFETs in the Weak-to-Moderate-Inversion Region

Jinglin Shi,, Yong Zhong Xiong,, Kai Kang,, Lan Nan,, Fujiang Lin,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 161 KB

english, 2009

14

Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric

Chang, M.F., Lee, P.T., McAlister, S.P., Chin, A.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 180 KB

english, 2009

15

Improved Electrical Performance of MILC Poly-Si TFTs Using $\hbox{CF}_{4}$ Plasma by Etching Surface of Channel

Chih-Pang Chang,, Wu, Y.S.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 420 KB

english, 2009

16

A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate

Yao-Jen Lee,, Fu-Kuo Hsueh,, Shih-Chiang Huang,, Kowalski, J.M., Kowalski, J.E., Cheng, A., Ann Koo,, Guang-Li Luo,, Ching-Yi Wu,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 193 KB

english, 2009

17

A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge Transport

Tahui Wang,, Chun-Jung Tang,, Li, C.-W., Chih Hsiung Lee,, Ou, T.-F., Yao-Wen Chang,, Wen-Jer Tsai,, Tao-Cheng Lu,, Chen, K.-C., Chih-Yuan Lu,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 239 KB

english, 2009

18

A Comparative NBTI Study of $\hbox{HfO}_{2}$, $\hbox{HfSiO}_{x}$, and SiON p-MOSFETs Using UF-OTF $I_{\rm DLIN}$ Technique

Deora, S., Maheta, V.D., Bersuker, G., Olsen, C., Ahmed, K.Z., Jammy, R., Mahapatra, S.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 144 KB

english, 2009

19

Negative Differential Resistance in Buried-Channel $\hbox{Ge}_{x} \hbox{C}_{1 - x}$ pMOSFETs

En-Shao Liu,, Kelly, D.Q., Donnelly, J.P., Tutuc, E., Banerjee, S.K.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 197 KB

english, 2009

20

Mesoscopic EMR Device Magnetic Sensitivity in $I$–$V$–$I$ –$V$ Configuration

Boone, T.D., Smith, N., Folks, L., Katine, J.A., Marinero, E.E., Gurney, B.A.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 251 KB

english, 2009

21

Nickel Salicided Source/Drain Extensions for Performance Improvement in Ultrascaled (Sub 10 nm) Si-Nanowire Transistors

Jiang, Y., Liow, T.Y., Singh, N., Tan, L.H., Guo Qiang Lo,, Chan, D., Kwong, D.L.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 238 KB

english, 2009

22

Gate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (URAM)

Jin-Woo Han,, Seong-Wan Ryu,, Sung-Jin Choi,, Yang-Kyu Choi,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 396 KB

english, 2009

23

Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film

Sang-Jun Choi,, Jung-Hyun Lee,, Hyung-Jin Bae,, Woo-Young Yang,, Tae-Wan Kim,, Ki-Hong Kim,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 146 KB

english, 2009

24

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

Riedel, G.J., Pomeroy, J.W., Hilton, K.P., Maclean, J.O., Wallis, D.J., Uren, M.J., Martin, T., Forsberg, U., Lundskog, A., Kakanakova-Georgieva, A., Pozina, G., Janzen, E., Lossy, R., Pazirandeh, R.,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 235 KB

english, 2009

25

Floating Gate Memories?

Cellere, G., Gerardin, S., Bagatin, M., Paccagnella, A., Visconti, A., Bonanomi, M., Beltrami, S., Harboe-Sorensen, R., Virtanen, A., Roche, P.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 92 KB

english, 2009

26

Flash Memory Cells on Data Retention Characteristics

Park, M., Eungjin Ahn,, Eunsuk Cho,, Keonsoo Kim,, Won-Seong Lee,

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 425 KB

english, 2009

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