Errors in Projecting Gate Dielectric Reliability From...

IEEE Electron Device Letters 2009 / 11 Vol. 30; Iss. 11

Errors in Projecting Gate Dielectric Reliability From Fowler–Nordheim Stress to Direct-Tunneling Operation

Nicollian, P.E.
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2030698
Date:
November, 2009
File:
PDF, 136 KB
english, 2009
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