Corrections to “Novel Delta-Doped InAlGaP/GaAs...

IEEE Electron Device Letters 2008 / 10 Vol. 29; Iss. 10

Corrections to “Novel Delta-Doped InAlGaP/GaAs Heterojunction Bipolar Transistor” [Jul 08 671-673]

Lin, Yu-Shyan, Jiang, Jia-Jhen
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Volume:
29
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.2005660
Date:
October, 2008
File:
PDF, 37 KB
2008
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