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Corrections to “Novel Delta-Doped InAlGaP/GaAs Heterojunction Bipolar Transistor” [Jul 08 671-673]
Lin, Yu-Shyan, Jiang, Jia-JhenVolume:
29
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.2005660
Date:
October, 2008
File:
PDF, 37 KB
2008