Three-Dimensional Electrostatics- and Atomistic...

IEEE Transactions on Electron Devices 2012 / 09 Vol. 59; Iss. 9

Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices—Part I: Physical Investigation

Castellani, Niccolò, Monzio Compagnoni, Christian, Mauri, Aurelio, Spinelli, Alessandro S., Lacaita, Andrea L.
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Volume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2012.2202910
Date:
September, 2012
File:
PDF, 444 KB
english, 2012
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