Selenium Segregation for Effective Schottky Barrier Height...

IEEE Electron Device Letters 2012 / 06 Vol. 33; Iss. 6

Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n–Ge Contacts

Tong, Yi, Liu, Bin, Lim, Phyllis Shi Ya, Yeo, Yee-Chia
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Volume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2012.2191760
Date:
June, 2012
File:
PDF, 509 KB
english, 2012
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