Comments on “Effective Modulation of Ni Silicide Schottky...

IEEE Electron Device Letters 2010 / 05 Vol. 31; Iss. 5

Comments on “Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation”

Connelly, Daniel, Clifton, Paul
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2010.2044360
Date:
May, 2010
File:
PDF, 206 KB
english, 2010
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