Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb/sub 2/O/sub 5/) with HfO/sub 2//Al/sub 2/O/sub 3/ barriers
Sun-Jung Kim,, Byung Jin Cho,, Ming Bin Yu,, Ming-Fu Li,, Yong-Zhong Xiong,, Chunxiang Zhu,, Chin, A., Dim-Lee Kwong,Volume:
26
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2005.854378
Date:
September, 2005
File:
PDF, 284 KB
english, 2005