Volume 26; Issue 9

IEEE Electron Device Letters

Volume 26; Issue 9

1

Power-area evaluation of various double-gate RF mixer topologies

Reddy, M.V.R., Sharma, D.K., Patil, M.B., Rao, V.R.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 160 KB

english, 2005

2

Threading dislocation induced low frequency noise in strained-Si nMOSFETs

Hua, W.-C., Lee, M.H., Chen, P.S., Tsai, M.-J., Liu, C.W.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 282 KB

english, 2005

3

Study of Ta-barrier and pore sealing dielectric layer interaction for enhanced barrier performance of Cu/ultralow /spl kappa/(/spl kappa/

X. Chen, D. Gui, D. Chi, W. Wang, N. Babu, N. Hwang, G. Lo, R. Kumar, N. Balasubramanian, D. Kwong

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 140 KB

english, 2005

4

A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-/spl mu/m CMOS technology

T. Hsu, Y. Fang, D. Yaung, S. Wuu, H. Chien, C. Tseng, L. Yao, W. Wang, C. Wang, S. Chen

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 251 KB

english, 2005

5

10-GHz power performance of a type II InP/GaAsSb DHBT

Caruth, D.C., Chu-Kung, B.F., Milton Feng,

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 405 KB

english, 2005

6

Corrections to "Fabrication of High-Quality p-MOSFET in Ge Grown Heteroepitaxially on Si"

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 26 KB

english, 2005

7

A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel

Lin, H.-C., Lee, M.-H., Su, C.-J., Huang, T.-Y., Lee, C.C., Yang, Y.-S.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 352 KB

english, 2005

8

Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO/sub 2/ gate stack with low preexisting traps

Sa, N., Kang, J.F., Yang, H., Liu, X.Y., He, Y.D., Han, R.Q., Ren, C., Yu, H.Y., Chan, D.S.H., Kwong, D.-L.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 170 KB

english, 2005

9

Fabrication and characterization of 100-nm In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As double-gate HEMTs with two separate gate controls

Wichmann, N., Duszynski, I., Wallart, X., Bollaert, S., Cappy, A.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 241 KB

english, 2005

10

In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

Fu, L., Lever, P., Sears, K., Tan, H.H., Jagadish, C.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 590 KB

english, 2005

11

Highly scalable saddle MOSFET for high-density and high-performance DRAM

Ki-Heung Park,, Kyoung-Rok Han,, Jong-Ho Lee,

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 254 KB

english, 2005

12

Broad-band photoresponse from InAs quantum dots embedded into InGaAs graded well

Jie Liang,, Ying Chao,, Manasreh, M.O., Marega, E., Salamo, G.J.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 118 KB

english, 2005

13

Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs

Hong-Nien Lin,, Hung-Wei Chen,, Chih-Hsin Ko,, Chung-Hu Ge,, Horng-Chih Lin,, Tiao-Yuan Huang,, Wen-Chin Lee,

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 172 KB

english, 2005

14

High-performance inductors on plastic substrate

Guo, L.H., Zhang, Q.X., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 176 KB

english, 2005

15

Analytic model for the post-breakdown conductance of sub-5-nm SiO/sub 2/ gate oxides

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 172 KB

english, 2005

16

Optimum crystallographic alignment for Si n-channel ballistic DGFETs

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 256 KB

english, 2005

17

Pulse waveform dependence on AC bias temperature instability in pMOSFETs

Shiyang Zhu,, Nakajima, A., Ohashi, T., Miyake, H.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 182 KB

english, 2005

18

Hole transport in UTB MOSFETs in strained-Si directly on insulator with strained-Si thickness less than 5 nm

Aberg, I., Hoyt, J.L.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 406 KB

english, 2005

19

A new oxide trap-assisted NBTI degradation model

Jha, N.K., Rao, V.R.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 124 KB

english, 2005

20

Top-gate TFTs using 13.56 MHz PECVD microcrystalline silicon

Czang-Ho Lee,, Striakhilev, D., Sheng Tao,, Nathan, A.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 142 KB

english, 2005

21

Evidence of reduced self-heating in strained Si MOSFETs

Nicholas, G., Grasby, T.J., Parker, E.H.C., Whall, T.E., Skotnicki, T.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 154 KB

english, 2005

22

Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels

Yung-Chun Wu,, Ting-Chang Chang,, Po-Tsun Liu,, Cheng-Wei Chou,, Yuan-Chun Wu,, Chun-Hao Tu,, Chun-Yen Chang,

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 284 KB

english, 2005

23

Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb/sub 2/O/sub 5/) with HfO/sub 2//Al/sub 2/O/sub 3/ barriers

Sun-Jung Kim,, Byung Jin Cho,, Ming Bin Yu,, Ming-Fu Li,, Yong-Zhong Xiong,, Chunxiang Zhu,, Chin, A., Dim-Lee Kwong,

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 284 KB

english, 2005

24

Gate-assisted high-Q-factor junction varactor

Gau, J.-H., Wu, R.-T., Sang, S., Kuo, C.-H., Chang, T.-L., Chen, H.-H., Chen, A., Ko, J.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 293 KB

english, 2005

25

Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique

Xuejie Shi,, Henttinen, K., Suni, T., Suni, I., Man Wong,

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 142 KB

english, 2005

26

Investigation and modeling of stress effects on the formation of cobalt salicide

Hsu, Y.L., Fang, Y.K., Fang, S.J., Chu, P., Yens Ho,

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 1.02 MB

english, 2005

27

A study of highly scalable DG-FinDRAM

Yoshida, E., Miyashita, T., Tanaka, T.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 319 KB

english, 2005