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Volume 26; Issue 9
Main
IEEE Electron Device Letters
Volume 26; Issue 9
IEEE Electron Device Letters
Volume 26; Issue 9
1
Power-area evaluation of various double-gate RF mixer topologies
Reddy, M.V.R.
,
Sharma, D.K.
,
Patil, M.B.
,
Rao, V.R.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 160 KB
Your tags:
english, 2005
2
Threading dislocation induced low frequency noise in strained-Si nMOSFETs
Hua, W.-C.
,
Lee, M.H.
,
Chen, P.S.
,
Tsai, M.-J.
,
Liu, C.W.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 282 KB
Your tags:
english, 2005
3
Study of Ta-barrier and pore sealing dielectric layer interaction for enhanced barrier performance of Cu/ultralow /spl kappa/(/spl kappa/
X. Chen
,
D. Gui
,
D. Chi
,
W. Wang
,
N. Babu
,
N. Hwang
,
G. Lo
,
R. Kumar
,
N. Balasubramanian
,
D. Kwong
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 140 KB
Your tags:
english, 2005
4
A high-efficiency CMOS image sensor with air gap in situ MicroLens (AGML) fabricated by 0.18-/spl mu/m CMOS technology
T. Hsu
,
Y. Fang
,
D. Yaung
,
S. Wuu
,
H. Chien
,
C. Tseng
,
L. Yao
,
W. Wang
,
C. Wang
,
S. Chen
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 251 KB
Your tags:
english, 2005
5
10-GHz power performance of a type II InP/GaAsSb DHBT
Caruth, D.C.
,
Chu-Kung, B.F.
,
Milton Feng,
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 405 KB
Your tags:
english, 2005
6
Corrections to "Fabrication of High-Quality p-MOSFET in Ge Grown Heteroepitaxially on Si"
Taur, Y.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 26 KB
Your tags:
english, 2005
7
A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel
Lin, H.-C.
,
Lee, M.-H.
,
Su, C.-J.
,
Huang, T.-Y.
,
Lee, C.C.
,
Yang, Y.-S.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 352 KB
Your tags:
english, 2005
8
Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO/sub 2/ gate stack with low preexisting traps
Sa, N.
,
Kang, J.F.
,
Yang, H.
,
Liu, X.Y.
,
He, Y.D.
,
Han, R.Q.
,
Ren, C.
,
Yu, H.Y.
,
Chan, D.S.H.
,
Kwong, D.-L.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 170 KB
Your tags:
english, 2005
9
Fabrication and characterization of 100-nm In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As double-gate HEMTs with two separate gate controls
Wichmann, N.
,
Duszynski, I.
,
Wallart, X.
,
Bollaert, S.
,
Cappy, A.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 241 KB
Your tags:
english, 2005
10
In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition
Fu, L.
,
Lever, P.
,
Sears, K.
,
Tan, H.H.
,
Jagadish, C.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 590 KB
Your tags:
english, 2005
11
Highly scalable saddle MOSFET for high-density and high-performance DRAM
Ki-Heung Park,
,
Kyoung-Rok Han,
,
Jong-Ho Lee,
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 254 KB
Your tags:
english, 2005
12
Broad-band photoresponse from InAs quantum dots embedded into InGaAs graded well
Jie Liang,
,
Ying Chao,
,
Manasreh, M.O.
,
Marega, E.
,
Salamo, G.J.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 118 KB
Your tags:
english, 2005
13
Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs
Hong-Nien Lin,
,
Hung-Wei Chen,
,
Chih-Hsin Ko,
,
Chung-Hu Ge,
,
Horng-Chih Lin,
,
Tiao-Yuan Huang,
,
Wen-Chin Lee,
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 172 KB
Your tags:
english, 2005
14
High-performance inductors on plastic substrate
Guo, L.H.
,
Zhang, Q.X.
,
Lo, G.Q.
,
Balasubramanian, N.
,
Kwong, D.-L.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 176 KB
Your tags:
english, 2005
15
Analytic model for the post-breakdown conductance of sub-5-nm SiO/sub 2/ gate oxides
Miranda, E.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 172 KB
Your tags:
english, 2005
16
Optimum crystallographic alignment for Si n-channel ballistic DGFETs
Laux, S.E.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 256 KB
Your tags:
english, 2005
17
Pulse waveform dependence on AC bias temperature instability in pMOSFETs
Shiyang Zhu,
,
Nakajima, A.
,
Ohashi, T.
,
Miyake, H.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 182 KB
Your tags:
english, 2005
18
Hole transport in UTB MOSFETs in strained-Si directly on insulator with strained-Si thickness less than 5 nm
Aberg, I.
,
Hoyt, J.L.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 406 KB
Your tags:
english, 2005
19
A new oxide trap-assisted NBTI degradation model
Jha, N.K.
,
Rao, V.R.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 124 KB
Your tags:
english, 2005
20
Top-gate TFTs using 13.56 MHz PECVD microcrystalline silicon
Czang-Ho Lee,
,
Striakhilev, D.
,
Sheng Tao,
,
Nathan, A.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 142 KB
Your tags:
english, 2005
21
Evidence of reduced self-heating in strained Si MOSFETs
Nicholas, G.
,
Grasby, T.J.
,
Parker, E.H.C.
,
Whall, T.E.
,
Skotnicki, T.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 154 KB
Your tags:
english, 2005
22
Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels
Yung-Chun Wu,
,
Ting-Chang Chang,
,
Po-Tsun Liu,
,
Cheng-Wei Chou,
,
Yuan-Chun Wu,
,
Chun-Hao Tu,
,
Chun-Yen Chang,
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 284 KB
Your tags:
english, 2005
23
Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb/sub 2/O/sub 5/) with HfO/sub 2//Al/sub 2/O/sub 3/ barriers
Sun-Jung Kim,
,
Byung Jin Cho,
,
Ming Bin Yu,
,
Ming-Fu Li,
,
Yong-Zhong Xiong,
,
Chunxiang Zhu,
,
Chin, A.
,
Dim-Lee Kwong,
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 284 KB
Your tags:
english, 2005
24
Gate-assisted high-Q-factor junction varactor
Gau, J.-H.
,
Wu, R.-T.
,
Sang, S.
,
Kuo, C.-H.
,
Chang, T.-L.
,
Chen, H.-H.
,
Chen, A.
,
Ko, J.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 293 KB
Your tags:
english, 2005
25
Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique
Xuejie Shi,
,
Henttinen, K.
,
Suni, T.
,
Suni, I.
,
Man Wong,
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 142 KB
Your tags:
english, 2005
26
Investigation and modeling of stress effects on the formation of cobalt salicide
Hsu, Y.L.
,
Fang, Y.K.
,
Fang, S.J.
,
Chu, P.
,
Yens Ho,
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 1.02 MB
Your tags:
english, 2005
27
A study of highly scalable DG-FinDRAM
Yoshida, E.
,
Miyashita, T.
,
Tanaka, T.
Journal:
IEEE Electron Device Letters
Year:
2005
Language:
english
File:
PDF, 319 KB
Your tags:
english, 2005
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