A novel sacrificial gate stack process for suppression of...

IEEE Electron Device Letters 2000 / 08 Vol. 21; Iss. 8

A novel sacrificial gate stack process for suppression of boron penetration in p-MOSFET with shallow BF/sub 2/-implanted source/drain extension

Sun-Jay Chang,, Chun-Yen Chang,, Tien-Sheng Chao,, Sheng-Zhen Zhong,, Wen-Kuan Yeh,, Tiao-Yuan Huang,
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Volume:
21
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.852957
Date:
August, 2000
File:
PDF, 58 KB
english, 2000
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