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Volume 21; Issue 8
Main
IEEE Electron Device Letters
Volume 21; Issue 8
IEEE Electron Device Letters
Volume 21; Issue 8
1
Experimental evidence for quantum mechanical narrow channel effect in ultra-narrow MOSFET's
Majima, H.
,
Ishikuro, H.
,
Hiramoto, T.
Journal:
IEEE Electron Device Letters
Year:
2000
Language:
english
File:
PDF, 150 KB
Your tags:
english, 2000
2
Effect of oxide tunneling on the measurement of MOS interface states
M. Giannini
,
A. Pacelli
,
A. Lacaita
,
L. Perron
Journal:
IEEE Electron Device Letters
Year:
2000
Language:
english
File:
PDF, 63 KB
Your tags:
english, 2000
3
Inkjet printed copper source/drain metallization for amorphous silicon thin-film transistors
Cheong Min Hong
,
S. Wagner
Journal:
IEEE Electron Device Letters
Year:
2000
Language:
english
File:
PDF, 90 KB
Your tags:
english, 2000
4
Reference SAW oscillator on quartz-on-silicon (QoS) wafer for polylithic integration of true single chip radio
Yunseong Eo,
,
Seokbong Hyun,
,
Kwyro Lee,
,
Gilhwan Oh,
,
Joong-Won Lee,
Journal:
IEEE Electron Device Letters
Year:
2000
Language:
english
File:
PDF, 96 KB
Your tags:
english, 2000
5
Robust ultrathin oxynitride dielectrics by NH3 nitridation and N/sub 2/O RTA treatment
Tung Ming Pan,
,
Tan Fu Lei,
,
Tien Sheng Chao,
Journal:
IEEE Electron Device Letters
Year:
2000
Language:
english
File:
PDF, 66 KB
Your tags:
english, 2000
6
Two-step rapid thermal annealing (TS-RTA) to suppress out-diffusion of dopants without degrading short channel effect of transistor
Jong-Wan Jung,
,
Jae-Sung Roh,
,
Youngjong Lee,
,
Kyungho Lee,
Journal:
IEEE Electron Device Letters
Year:
2000
Language:
english
File:
PDF, 42 KB
Your tags:
english, 2000
7
Can macroscopic oxide thickness uniformity improve oxide reliability?
Wu, E.Y.
,
Nowak, E.J.
,
Vollertsen, R.-P.
Journal:
IEEE Electron Device Letters
Year:
2000
Language:
english
File:
PDF, 65 KB
Your tags:
english, 2000
8
Optical confinement in thin-film crystalline silicon solar cells by adhesive bonding of ceramic substrate
Takato, H.
,
Shimokawa, R.
Journal:
IEEE Electron Device Letters
Year:
2000
Language:
english
File:
PDF, 74 KB
Your tags:
english, 2000
9
A novel sacrificial gate stack process for suppression of boron penetration in p-MOSFET with shallow BF/sub 2/-implanted source/drain extension
Sun-Jay Chang,
,
Chun-Yen Chang,
,
Tien-Sheng Chao,
,
Sheng-Zhen Zhong,
,
Wen-Kuan Yeh,
,
Tiao-Yuan Huang,
Journal:
IEEE Electron Device Letters
Year:
2000
Language:
english
File:
PDF, 58 KB
Your tags:
english, 2000
10
Modulating HBT's current gain by using externally biased on-ledge Schottky diode [GaAs devices]
Pingxi Ma,
,
Yuefei Yang,
,
Zampardi, P.
,
Huang, R.T.
,
Chang, M.F.
Journal:
IEEE Electron Device Letters
Year:
2000
Language:
english
File:
PDF, 65 KB
Your tags:
english, 2000
11
A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET
Lun, Z.
,
Ang, D.S.
,
Ling, C.H.
Journal:
IEEE Electron Device Letters
Year:
2000
Language:
english
File:
PDF, 78 KB
Your tags:
english, 2000
12
Distributed ESD protection for high-speed integrated circuits
Kleveland, B.
,
Maloney, T.J.
,
Morgan, I.
,
Madden, L.
,
Lee, T.H.
,
Wong, S.S.
Journal:
IEEE Electron Device Letters
Year:
2000
Language:
english
File:
PDF, 93 KB
Your tags:
english, 2000
13
High performance SONOS memory cells free of drain turn-on and over-erase: compatibility issue with current flash technology
Myung Kwan Cho,
,
Kim, D.M.
Journal:
IEEE Electron Device Letters
Year:
2000
Language:
english
File:
PDF, 51 KB
Your tags:
english, 2000
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