Plasma Doping of InGaAs at Elevated Substrate Temperature...

IEEE Transactions on Electron Devices 2014 / 9 Vol. 61; Iss. 9

Plasma Doping of InGaAs at Elevated Substrate Temperature for Reduced Sheet Resistance and Defect Formation

Kong, Eugene Y.-J., Subramanian, Sujith, D'Costa, Vijay Richard, Chua, Lye-Hing, Zou, Wei, Chan, Cleon, Henry, Todd, Yeo, Yee-Chia
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2014.2341619
Date:
September, 2014
File:
PDF, 2.57 MB
english, 2014
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