Dopant Migration-Induced Interface Dipole Effect in n-Doped...

IEEE Electron Device Letters 2008 / 10 Vol. 29; Iss. 10

Dopant Migration-Induced Interface Dipole Effect in n-Doped GaAs/AlGaAs Terahertz Detectors

Jit, S., Weerasekara, A.B., Jayasinghe, R.C., Matsik, S.G., Perera, A., Buchanan, M., Sproule, G.I., Liu, H.C., Stintz, A., Krishna, S., Khanna, S.P., Lachab, M., Linfield, E.H.
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Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.2002946
Date:
October, 2008
File:
PDF, 310 KB
english, 2008
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