GaAs/sub x/Sb/sub 1-x//In/sub y/Al/sub 1-y/As p-channel...

IEEE Electron Device Letters 1993 / 03 Vol. 14; Iss. 3

GaAs/sub x/Sb/sub 1-x//In/sub y/Al/sub 1-y/As p-channel heterostructure FETs with high transconductance and low gate leakage current

Martinez, M.J., Schuermeyer, F.L., Stutz, C.E.
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Volume:
14
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.215133
Date:
March, 1993
File:
PDF, 249 KB
english, 1993
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