Volume 14; Issue 3

IEEE Electron Device Letters

Volume 14; Issue 3

1

Linear dynamic self-heating in SOI MOSFETs

Caviglia, A.L., Iliadis, A.A.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 288 KB

english, 1993

2

Tin oxide gas sensor fabricated using CMOS micro-hotplates and in-situ processing

Suehle, J.S., Cavicchi, R.E., Gaitan, M., Semancik, S.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 419 KB

english, 1993

3

An experimental study on the short-channel effects in undergated polysilicon thin-film transistors with and without lightly doped drain structures

Liu, C.T., Lee, K.H.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 249 KB

english, 1993

4

Dead-space effects under near-breakdown conditions in AlGaAs/GaAs HBT's

De Carlo, A., Lugli, P.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 354 KB

english, 1993

5

An InP-based optothyristor for pulsed power-switching applications

J. Zhao, R. Lis, D. Coblentz, J. Illan, S. Mcafee, T. Burke, M. Weiner, W. Buchwald, K. Jones

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 274 KB

english, 1993

6

Electrical characteristics of textured polysilicon oxide prepared by a low-temperature wafer loading and N/sub 2/ preannealing process

Shye Lin Wu,, Ta Yow Lin,, Chung Len Lee,, Tai Fu Lei,

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 219 KB

english, 1993

7

GaAs planar-doped barrier vacuum microelectronic electron emitters

Jiang, W.N., Holcombe, D.J., Hashemi, M.M., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 315 KB

english, 1993

8

200 nm gated field emitters

Huang, Z., McGruer, N.E., Warner, K.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 292 KB

english, 1993

9

On the geometric component of charge-pumping current in MOSFETs

Van den Bosch, G., Groeseneken, G., Maes, H.E.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 295 KB

english, 1993

10

H/sub 2//O/sub 2/ plasma on polysilicon thin-film transistor

Horng Nan Chern,, Chung Len Lee,, Tan Fu Lei,

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 263 KB

english, 1993

11

Characterization of double pulse-doped channel GaAs MESFETs

Nakajima, S., Kuwata, N., Shiga, N., Otobe, K., Matsuzaki, K., Sekiguchi, T., Hayashi, H.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 253 KB

english, 1993

12

A new damascene structure for submicrometer interconnect wiring

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 368 KB

english, 1993

13

Metal base transistor of In/Bi(Ba,Rb)O/sub 3//SrTiO/sub 3/ (Nb)

Abe, H., Toda, F., Ogiwara, M.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 305 KB

english, 1993

14

Experimental determination of self-heating in submicrometer MOS transistors operated in a liquid-helium ambient

Gutierrez-D., E.A., Deferm, L., Declerck, G.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 269 KB

english, 1993

15

GaAs/sub x/Sb/sub 1-x//In/sub y/Al/sub 1-y/As p-channel heterostructure FETs with high transconductance and low gate leakage current

Martinez, M.J., Schuermeyer, F.L., Stutz, C.E.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 249 KB

english, 1993

16

N-channel Si/SiGe MODFETs: effects of rapid thermal activation on the DC performance

Konig, U., Boers, A.J., Schaffler, F.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 356 KB

english, 1993

17

Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

Neudeck, P.G., Larkin, D.J., Starr, J.E., Powell, J.A., Salupo, C.S., Matus, L.G.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 426 KB

english, 1993

18

New effects of modified illumination in optical lithography

Asai, S., Hanyu, I., Takikawa, M.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 258 KB

english, 1993

19

Rapid thermal annealing effects on Si p/sup +/-n junctions fabricated by low-energy FIB Ga/sup +/ implantation

Mogul, H.C., Steckl, A.J.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 257 KB

english, 1993

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