Growth of in situ doped silicon epitaxial layer by rapid thermal processing
Lee, S. K., Ku, Y. H., Hsieh, T. Y., Jung, K. H., Kwong, D. L., Spratt, David, Chu, P.Volume:
57
Year:
1990
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.104069
File:
PDF, 575 KB
english, 1990