Volume 57; Issue 16

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Applied Physics Letters
Volume 57; Issue 16

Applied Physics Letters

Volume 57; Issue 16

1

Powder-free plasma chemical vapor deposition of hydrogenated amorphous silicon with high rf power density using modulated rf discharge

Watanabe, Y., Shiratani, M., Makino, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 450 KB

english, 1990

2

N+ doping of gallium arsenide by rapid thermal oxidation of a silicon cap

Sadana, D. K., de Souza, J. P., Cardone, F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 666 KB

english, 1990

3

InGaAs/InP quantum well lasers with sub-mA threshold current

Temkin, H., Dutta, N. K., Tanbun-Ek, T., Logan, R. A., Sergent, A. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 640 KB

english, 1990

4

Growth of YBa2Cu3O7 thin films on MgO: The effect of substrate preparation

Moeckly, B. H., Russek, S. E., Lathrop, D. K., Buhrman, R. A., Li, Jian, Mayer, J. W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 611 KB

english, 1990

5

Growth of InGaAs structures using in situ electrochemically generated arsine

Buckley, D. N., Seabury, C. W., Valdes, J. L., Cadet, G., Mitchell, J. W., DiGiuseppe, M. A., Smith, R. C., Filipe, J. R. C., Bylsma, R. B., Chakrabarti, U. K., Wang, K-W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 580 KB

english, 1990

6

Submilliamp threshold vertical-cavity laser diodes

Geels, Randall S., Coldren, Larry A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 514 KB

english, 1990

7

Spatially addressable light transducer using an organic electroluminescent diode combined with amorphous silicon carbide film as an electron photoinjecting electrode

Hiramoto, Masahiro, Miyao, Tomoya, Yokoyama, Masaaki

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 548 KB

english, 1990

8

Influence of high-dose γ irradiation on electron mobility in a silicon inversion layer

Majkusiak, B., Jakubowski, A., Grigorov, K., Balasiński, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 439 KB

english, 1990

9

Growth of in situ doped silicon epitaxial layer by rapid thermal processing

Lee, S. K., Ku, Y. H., Hsieh, T. Y., Jung, K. H., Kwong, D. L., Spratt, David, Chu, P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 575 KB

english, 1990

10

Ballistic current vortex excitations in electron waveguide structures

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 561 KB

english, 1990

11

Transport properties of excitons in GaAs quantum wells−time-resolved Raman probe

Tsen, K. T., Sankey, O. F., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 583 KB

english, 1990

12

Low-threshold (≤ 92 A/cm2) 1.6 μm strained-layer single quantum well laser diodes optically pumped by a 0.8 μm laser diode

Zah, C. E., Bhat, R., Cheung, K. W., Andreadakis, N. C., Favire, F. J., Menocal, S. G., Yablonovitch, E., Hwang, D. M., Koza, M., Gmitter, T. J., Lee, T. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 470 KB

english, 1990

13

Effect of annealing on superconductivity of Pb-doped Bi-Sr-Ca-Cu-O single-crystal superconductors

Gao, Y., Li, Y., Merkle, K. L., Jiang, P. Z., Chang, Y. C., Shi, H., Lam, D. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 734 KB

english, 1990

14

Radiation damage in ReSi2 by a MeV 4He beam

Bai, G., Nicolet, M-A., Mahan, John E., Geib, Kent M., Robinson, Gary Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 645 KB

english, 1990

15

Deep donors in GaSb grown by molecular beam epitaxy

Poole, I., Lee, M. E., Cleverley, I. R., Peaker, A. R., Singer, K. E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 556 KB

english, 1990

16

Double-sided epitaxy of multiquantum well modulator arrays by molecular beam epitaxy

Scott, E. G., Rejman-Greene, M. A. Z.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 437 KB

english, 1990

17

Lower plasma-induced damage in SiO2/Si at lower temperatures

Mizutani, Tatsumi, Yunogami, Takashi, Tsujimoto, Kazunori

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 469 KB

english, 1990

18

Micro-Raman characterization of structural defects in patterned GaAs-on-Si

Duncan, W. M., Matyi, R. J., Shichijo, H., Kao, Y.-C., Liu, H.-Y.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 533 KB

english, 1990

19

Onset of subharmonics generated by forward wave interactions in Bi12SiO20

Webb, D. J., Au, L. B., Jones, D. C., Solymar, L.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 479 KB

english, 1990

20

p-type delta-doped layers in silicon: Structural and electronic properties

Mattey, N. L., Dowsett, M. G., Parker, E. H. C., Whall, T. E., Taylor, S., Zhang, J. F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 479 KB

english, 1990

21

Vacuum lithography for in situ fabrication of buried semiconductor microstructures

Wang, Y. L., Temkin, H., Harriott, L. R., Hamm, R. A., Weiner, J. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 576 KB

english, 1990

22

Formation of titanium nitride layers by the nitridation of titanium in high-pressure ammonium ambient

Hara, Tohru, Tani, Kouichi, Inoue, Ken, Nakamura, Shigeaki, Murai, Takeshi

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 435 KB

english, 1990

23

Multi-beam-bulk model for electron transport during commutation in an optically triggered pseudospark thyratron

Pak, Hoyoung, Kushner, Mark J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 554 KB

english, 1990

24

Implantation profile of low-energy positrons in solids

Asoka-Kumar, P., Lynn, K. G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 503 KB

english, 1990

25

ZnSe field-effect transistors

Dreifus, D. L., Sneed, B. P., Ren, J., Cook, J. W., Schetzina, J. F., Kolbas, R. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 612 KB

english, 1990

26

Application of a near coincidence site lattice theory to the orientations of YBa2Cu3O7−x grains on (001) MgO substrates

Hwang, D. M., Ravi, T. S., Ramesh, R., Chan, Siu-Wai, Chen, C. Y., Nazar, L., Wu, X. D., Inam, A., Venkatesan, T.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 654 KB

english, 1990

27

Correlation length of interface roughness and its enhancement in molecular beam epitaxy grown GaAs/AlAs quantum wells studied by mobility measurement

Noda, T., Tanaka, M., Sakaki, H.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 586 KB

english, 1990

28

Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy

Chang, K. H., Lee, C. P., Wu, J. S., Liu, D. G., Liou, D. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 499 KB

english, 1990

29

New phase interference technique applied for sensitive photothermal microscopy

Walther, H. G., Friedrich, K., Haupt, K., Muratikov, K., Glazov, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 456 KB

english, 1990

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