Comments on “High Performance Inversion-Type...

IEEE Electron Device Letters 2008 / 10 Vol. 29; Iss. 10

Comments on “High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm”

Thayne, Iain G., Hill, Richard J. W., Moran, David A. J., Kalna, Karol, Asenov, Asen, Passlack, Matthias
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Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.2002752
Date:
October, 2008
File:
PDF, 73 KB
english, 2008
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