Full band Monte Carlo modeling of impact ionization,...

Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes

Ong, D. S., Li, K. F., Plimmer, S. A., Rees, G. J., David, J. P. R., Robson, P. N.
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Volume:
87
Year:
2000
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.373472
File:
PDF, 403 KB
english, 2000
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