Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes
Ong, D. S., Li, K. F., Plimmer, S. A., Rees, G. J., David, J. P. R., Robson, P. N.Volume:
87
Year:
2000
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.373472
File:
PDF, 403 KB
english, 2000