Volume 87; Issue 11

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Journal of Applied Physics
Volume 87; Issue 11

Journal of Applied Physics

Volume 87; Issue 11

1

Polarization and Fowler–Nordheim tunneling in anodized Al–Al2O3–Au diodes

Hickmott, T. W.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 388 KB

english, 2000

2

Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition

Romano, L. T., Van de Walle, C. G., Ager, J. W., Gotz, W., Kern, R. S.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 767 KB

english, 2000

3

Role of surface Al2O3 clusters on the kinetics of Al(111) oxidation

Popova, I., Zhukov, V., Yates, J. T.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 339 KB

english, 2000

4

The refractive index of Al[sub x]Ga[sub 1âx]As below the band gap: Accurate determination and empirical modeling

Gehrsitz, S., Reinhart, F. K., Gourgon, C., Herres, N., Vonlanthen, A., Sigg, H.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 495 KB

english, 2000

5

Kinetics of the thermally and photoinduced solid state reaction of Ag with As[sub 33]S[sub 67] films

Wagner, T., Dale, G., Ewen, P. J. S., Owen, A. E., Perina, V.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 508 KB

english, 2000

6

Electroluminescence mechanisms in organic light emitting devices employing a europium chelate doped in a wide energy gap bipolar conducting host

Adachi, Chihaya, Baldo, Marc A., Forrest, Stephen R.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 493 KB

english, 2000

7

DyakonovâShur plasma excitations in the channel of a real high-electron mobility transistor

Crowne, Frank J.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 355 KB

english, 2000

8

Chemical trends of the rattling phonon modes in alloyed germanium clathrates

Dong, Jianjun, Sankey, Otto F., Ramachandran, Ganesh K., McMillan, Paul F.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 516 KB

english, 2000

9

Quantum confinement and recombination dynamics in silicon nanocrystals embedded in Si/SiO[sub 2] superlattices

Vinciguerra, Vincenzo, FranzoÌ, Giorgia, Priolo, Francesco, Iacona, Fabio, Spinella, Corrado

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 664 KB

english, 2000

10

Bonding and hardness in nonhydrogenated carbon films with moderate sp[sup 3] content

Gago, R., JimeÌnez, I., Albella, J. M., Climent-Font, A., CaÌceres, D., Vergara, I., Banks, J. C., Doyle, B. L., Terminello, L. J.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 364 KB

english, 2000

11

Quantum refrigerators in quest of the absolute zero

Kosloff, Ronnie, Geva, Eitan, Gordon, Jeffrey M.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 356 KB

english, 2000

12

Complex color centers in ultraviolet-light irradiated PbWO[sub 4] single crystal

Li, Wensheng, Tang, Tong B., Feng, Xiqi

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 329 KB

english, 2000

13

Effects of laser fluence, size, and shape of the laser focal spot in pulsed laser deposition using a multielemental target

Tyunina, M., LeppaÌvuori, S.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 424 KB

english, 2000

14

Preparation and thermoelectric properties of A[sub 8][sup II]B[sub 16][sup III]B[sub 30][sup IV] clathrate compounds

Kuznetsov, V. L., Kuznetsova, L. A., Kaliazin, A. E., Rowe, D. M.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 327 KB

english, 2000

15

Secondary electron emission characteristics of single-crystal and polycrystalline diamond

Yater, J. E., Shih, A.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 288 KB

english, 2000

16

Electron emission from clean gold bombarded by slow Au[sup q+] (q=1–3) ions

Eder, H., Messerschmidt, W., Winter, HP., Aumayr, F.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 231 KB

english, 2000

17

Importance of indium tin oxide surface acido basicity for charge injection into organic materials based light emitting diodes

Nüesch, F., Forsythe, E. W., Le, Q. T., Gao, Y., Rothberg, L. J.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 316 KB

english, 2000

18

Crystal growth and structural, electrical, and optical characterization of CuIn[sub 3]Te[sub 5] and CuGa[sub 3]Te[sub 5] ordered vacancy compounds

Marı́n, G., Delgado, J. M., Wasim, S. M., Rincón, C., Pérez, G. Sánchez, Mora, A. E., Bocaranda, P., Henao, J. A.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 228 KB

english, 2000

19

Observation of quantum-confined Stark shifts in SiGe/Si type-I multiple quantum wells

Li, Cheng, Yang, Qinqing, Wang, Hongjie, Wei, Hongzheng, Yu, Jinzhong, Wang, Qiming

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 195 KB

english, 2000

20

Effect of bias voltage waveform on ion energy distribution

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 308 KB

english, 2000

21

Schottky diode formation and characterization of titanium tungsten to n- and p-type 4H silicon carbide

S. Lee, C. Zetterling, M. Östling

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 295 KB

english, 2000

22

Comment on “Dominant diffusing species during cobalt silicide formation” [J. Appl. Phys. 79, 153 (1996)]

d’Heurle, F. M., Zhang, S.-L.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 196 KB

english, 2000

23

Temperature dependence of anomalous currents in worst-bit cells in dynamic random-access memories

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 318 KB

english, 2000

24

Spectroscopic ellipsometry of epitaxial ZnO layer on sapphire substrate

Postava, K., Sueki, H., Aoyama, M., Yamaguchi, T., Ino, Ch., Igasaki, Y., Horie, M.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 266 KB

english, 2000

25

Dry etch damage in n-type GaN and its recovery by treatment with an N[sub 2] plasma

Lee, Ji-Myon, Chang, Ki-Myung, Kim, Sang-Woo, Huh, Chul, Lee, In-Hwan, Park, Seong-Ju

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 441 KB

english, 2000

26

Flaw length distribution measurement in brittle materials

Rabinovitch, A., Zlotnikov, R., Bahat, D.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 551 KB

english, 2000

27

Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell

Zheng, H. Q., Radahakrishnan, K., Yoon, S. F., Ng, G. I.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 324 KB

english, 2000

28

Electrical and structural properties of polycrystalline silicon

Tringe, Joseph W., Plummer, James D.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 1.09 MB

english, 2000

29

Origin of asymmetric growth during solid-state amorphization studied with molecular-dynamics simulation

Zhang, Q., Lai, W. S., Liu, B. X.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 398 KB

english, 2000

30

Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies

Zhang, Yifei, Smorchkova, I. P., Elsass, C. R., Keller, Stacia, Ibbetson, James P., Denbaars, Steven, Mishra, Umesh K., Singh, Jasprit

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 373 KB

english, 2000

31

Minority carrier lifetime and iron concentration measurements on p-Si wafers by infrared photothermal radiometry and microwave photoconductance decay

Rodrı́guez, M. E., Mandelis, A., Pan, G., Garcı́a, J. A., Gorodokin, V., Raskin, Y.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 1.38 MB

english, 2000

32

Oscillator strengths, Huang–Rhys parameters, and vibrational quantum energies of cerium-doped gadolinium oxyorthosilicate

Cooke, D. W., Bennett, B. L., McClellan, K. J., Roper, J. M., Whittaker, M. T.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 307 KB

english, 2000

33

Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes

Ong, D. S., Li, K. F., Plimmer, S. A., Rees, G. J., David, J. P. R., Robson, P. N.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 403 KB

english, 2000

34

Photoluminescence of InAs[sub 1−x]Sb[sub x]/AlSb single quantum wells: Transition from type-II to type-I band alignment

Yang, M. J., Bennett, B. R., Fatemi, M., Lin-Chung, P. J., Moore, W. J., Yang, C. H.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 357 KB

english, 2000

35

Modelling the percolation-type transition in radiation damage

Trachenko, Kostya, Dove, Martin T., Salje, Ekhard

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 467 KB

english, 2000

36

The optimization of optical gain in the intersubband quantum well laser

Tomić, Stanko, Tadić, Milan, Milanović, Vitomir, Ikonić, Zoran

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 357 KB

english, 2000

37

Local order determination in SiCN(AlY) laser-synthesized nanopowders by x-ray photoemission spectroscopy

Ténégal, F., de la Rocque, A. Gheorghiu, Dufour, G., Sénémaud, C., Mayne, M., Herlin-Boime, N., Armand, X., Cauchetier, M.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 347 KB

english, 2000

38

Diffusive transport and optimization of the hybrid Hall effect device

Reijniers, J., Peeters, F. M.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 539 KB

english, 2000

39

Rate constants for the reaction of H[sub 2] with defects at the SiO[sub 2]/Si(111) interface

Gheorghita, Ligia, Ogryzlo, Elmer

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 325 KB

english, 2000

40

Spatial variation of ferroelectric properties in Pb(Zr[sub 0.3], Ti[sub 0.7])O[sub 3] thin films studied by atomic force microscopy

Christman, James A., Kim, Seung-Hyun, Maiwa, Hiroshi, Maria, Jon-Paul, Rodriguez, Brian J., Kingon, Angus I., Nemanich, Robert J.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 528 KB

english, 2000

41

Atomic separation of Ni using tunable pulse lasers

Ishikawa, Toshiaki

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 369 KB

english, 2000

42

Investigations of harmonic generations in aperiodic optical superlattices

Gu, Ben-Yuan, Zhang, Yan, Dong, Bi-Zhen

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 365 KB

english, 2000

43

Scattering of a diffusive wave by a subsurface object

Thibaud, J.-B., Carminati, R., Greffet, J.-J.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 433 KB

english, 2000

44

Charge separation technique for metal–oxide–silicon capacitors in the presence of hydrogen deactivated dopants

Witczak, Steven C., Winokur, Peter S., Lacoe, Ronald C., Mayer, Donald C.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 274 KB

english, 2000

45

An optical study of self-assembled In[sub x]Ga[sub 1−x]As/GaAs quantum dots embedded in a two-dimensional electron gas

Ribeiro, E., Cerdeira, F., Brasil, M. J. S. P., Heinzel, T., Ensslin, K., Medeiros-Ribeiro, G., Petroff, P. M.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 366 KB

english, 2000

46

Electron density fluctuations at interfaces in Nb/Si bilayer, trilayer, and multilayer films: An x-ray reflectivity study

Suresh, N., Phase, D. M., Gupta, Ajay, Chaudhari, S. M.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 523 KB

english, 2000

47

Solid containing rotationally free nanocrystalline γ-Fe[sub 2]O[sub 3]: Material for a nanoscale magnetic compass?

Tejada, Javier, Zhang, XiXiang, Kroll, Elizabeth, Bohigas, Xavier, Ziolo, Ronald F.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 297 KB

english, 2000

48

Positron annihilation study of defects in boron implanted silicon

Huang, M. B., Myler, U., Simpson, P. J., Mitchell, I. V.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 328 KB

english, 2000

49

X-ray investigations of the molecular mobility within polymer surface gratings

Geue, Th., Schultz, M., Grenzer, J., Pietsch, U., Natansohn, A., Rochon, P.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 697 KB

english, 2000

50

Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor

Miller, E. J., Dang, X. Z., Wieder, H. H., Asbeck, P. M., Yu, E. T., Sullivan, G. J., Redwing, J. M.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 298 KB

english, 2000

51

Kinetics of scanned probe oxidation: Space-charge limited growth

Dubois, Emmanuel, Bubendorff, Jean-Luc

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 601 KB

english, 2000

52

Relaxation dynamics of nonequilibrium electron-phonon gases in a polar semiconductor

Nahm, J. C., Hong, H. R., Kim, D. Y., Kim, C. S.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 325 KB

english, 2000

53

Electron field emission from tetrahedral amorphous carbon films with multilayer structure

Zhao, J. P., Chen, Z. Y., Wang, X., Shi, T. S.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 345 KB

english, 2000

54

Crystal structure and electrical properties of epitaxial SrBi[sub 2]Ta[sub 2]O[sub 9] films

Ishikawa, Katsuyuki, Funakubo, Hiroshi, Saito, Keisuke, Suzuki, Toshimasa, Nishi, Yuji, Fujimoto, Masayuki

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 960 KB

english, 2000

55

Nanoindentation investigation of Ti/TiN multilayers films

Daia, M. Ben, Aubert, P., Labdi, S., Sant, C., Sadi, F. A., Houdy, Ph., Bozet, J. L.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 355 KB

english, 2000

56

Effect of growth temperature on the electric properties of In[sub 0.12]Ga[sub 0.88]As/GaAs p-i-n multiple-quantum-well diodes

Chen, J. F., Wang, P. Y., Wang, J. S., Wong, H. Z.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 352 KB

english, 2000

57

Coatings for optical pumping cells and short-term storage of hyperpolarized xenon

Breeze, Steven R., Lang, Stephen, Moudrakovski, Igor, Ratcliffe, Chris I., Ripmeester, John A., Santyr, Giles, Simard, Benoit, Zuger, Irene

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 286 KB

english, 2000

58

Optics of Si/SiO[sub 2] superlattices: Application to Raman scattering and photoluminescence measurements

Khriachtchev, Leonid, Novikov, Sergei, Kilpelä, Olli

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 359 KB

english, 2000

59

High field transport in strained Si/GeSi double heterostructure: A Fokker–Planck approach

Comas, F., Studart, Nelson

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 310 KB

english, 2000

60

Mechanical properties of xerogel silica films derived from stress versus temperature and cracking experiments

Chow, L. A., Dunn, B., Tu, K. N., Chiang, C.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 545 KB

english, 2000

61

Transport properties of Be- and Si-doped AlSb

Bennett, Brian R., Moore, W. J., Yang, M. J., Shanabrook, B. V.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 289 KB

english, 2000

62

Response to “Comment on ‘Analysis of high-resolution x-ray diffraction in semiconductor strained layers’ ” [J. Appl. Phys. 87, 8212 (2000)]

Dunstan, D. J., Kimber, A. C.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 244 KB

english, 2000

63

Rapid thermal oxidation of silicon in ozone

Cui, Zhenjiang, Madsen, Jonathan M., Takoudis, Christos G.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 314 KB

english, 2000

64

Electron and negative ion densities in C[sub 2]F[sub 6] and CHF[sub 3] containing inductively coupled discharges

Hebner, G. A., Miller, P. A.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 334 KB

english, 2000

65

Effects of relaxation on glass transition and crystallization of ZrTiCuNiBe bulk metallic glass

Zhuang, Yan Xin, Wang, Wei Hua

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 378 KB

english, 2000

66

Mesoscopic kinetics of nonequilibrium solidification

Cai, Yingwen, Zhang, Guilin, Fu, Hengzhi

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 309 KB

english, 2000

67

A simple measurement of the absolute internal quantum efficiency of thin organic films

Nollau, A., Hoffmann, M., Floreck, K., Fritz, T., Leo, K.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 272 KB

english, 2000

68

Asymmetric doping effects on electronic properties of coupled quantum wells in an in-plane magnetic field

Aceituno, P., Hernández-Cabrera, A., Ramos, A., Vasko, F. T.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 347 KB

english, 2000

69

Simulation of one-dimensional ring quantum interference transistors using the time-dependent finite-difference beam propagation method

Heller, E. K., Jain, F. C.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 1.52 MB

english, 2000

70

Reply to “Comment on ‘Dominant diffusing species during cobalt silicide formation’ ” [J. Appl. Phys. 87, 8216 (2000)]

Comrie, C. M., Newman, R. T.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 275 KB

english, 2000

71

Deposition of nanocrystalline cubic silicon carbide films using the hot-filament chemical-vapor-deposition method

Yu, M. B., Rusli,, Yoon, S. F., Chen, Z. M., Ahn, J., Zhang, Q., Chew, K., Cui, J.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 441 KB

english, 2000

72

Bulk noise processes and their correlation to structural imperfections in magnesium-doped p-type GaN grown on sapphire

Rice, A. K., Malloy, K. J.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 333 KB

english, 2000

73

Infrared photoluminescence from Er doped porous Si

Henley, W., Koshka, Y., Lagowski, J., Siejka, J.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 326 KB

english, 2000

74

Effect of lead additive on the ferroelectric properties and microstructure of Sr[sub x]Pb[sub y]Bi[sub 2z]Ta[sub 2]O[sub 9] thin films

Chen, San-Yuan, Lee, Ving-Ching

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 903 KB

english, 2000

75

Silicon wafer surface passivation by low-temperature oxidation prior to ultraviolet radiation for photoconductive decay measurement

Lee, W. P., Khong, Y. L.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 297 KB

english, 2000

76

In situ ion channeling study of gallium disorder and gold profiles in Au-implanted GaN

Jiang, W., Weber, W. J., Thevuthasan, S.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 401 KB

english, 2000

77

Linewidth analysis of the photoluminescence from InAs/GaSb/InAs/AlSb type-II superlattices

Ongstad, Andrew P., Dente, Gregory C., Tilton, Michael L., Gianardi, Donald, Turner, George

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 354 KB

english, 2000

78

Topology of amorphous gallium arsenide on intermediate length scales: A molecular dynamics study

Ebbsjö, Ingvar, Kalia, Rajiv K., Nakano, Aiichiro, Rino, Jose P., Vashishta, Priya

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 392 KB

english, 2000

79

Determination of the optical constants of the γ-phase GdH[sub 3] thin films

Lee, M. W., Lin, C. H.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 322 KB

english, 2000

80

Comment on “Analysis of high-resolution x-ray diffraction in semiconductor strained layers” [J. Appl. Phys. 86, 782 (1999)]

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 290 KB

english, 2000

81

X-ray diffraction and phenomenological studies of the engineered monoclinic crystal domains in single crystal relaxor ferroelectrics

Durbin, M. K., Hicks, J. C., Park, S.-E., Shrout, T. R.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 363 KB

english, 2000

82

Populations of excited atomic states along argon surface-wave plasma columns at low and intermediate pressures

Lao, C., Gamero, A., Sola, A., Petrova, Ts., Benova, E., Petrov, G. M., Zhelyazkov, I.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 516 KB

english, 2000

83

Highly sensitive photocurrent spectroscopy of resonant couplings between GaAs/AlAs superlattice Stark ladders and GaAs single quantum well states

Nogami, T., Kawasaki, K., Kawashima, K., Fujiwara, K.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 503 KB

english, 2000

84

Patterned diamond particle films

Fox, N. A., Youh, M. J., Steeds, J. W., Wang, W. N.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 869 KB

english, 2000

85

Comment on “Electron microprobe quantification: A new model based on electrons rather than on mass” [J. Appl. Phys. 86, 2790 (1999)]

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 272 KB

english, 2000

86

Photoreflectance study of phosphorus passivation of GaAs (001)

Beaudry, Richard, Watkins, Simon P., Xu, Xiangang, Yeo, Philip

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 783 KB

english, 2000

87

Shallow buried SiN[sub x] layers

Barbadillo, L., Hernández, M. J., Cervera, M., Rodrı́guez, P., Piqueras, J.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 300 KB

english, 2000

88

Optical properties of partially damaged ion implanted SiC layers by use of effective medium models

Wendler, E., Peiter, G.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 341 KB

english, 2000

89

Two-dimensional acousto-electro-optic effect and device

Yu, Kuanxin, He, Shiya, Zhao, Qida

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 263 KB

english, 2000

90

In- and out-diffusion of oxygen during the buried-oxide formation in oxygen-implanted silicon

Ono, Haruhiko, Ogura, Atsushi

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 314 KB

english, 2000

91

Thickness dependence of domain formation in epitaxial PbTiO[sub 3] thin films grown on MgO (001) substrates

Lee, K. S., Baik, S.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 320 KB

english, 2000