A new compressively strained-layer p-type InGaAs/AlGaAs/GaAs step bound to miniband quantum well infrared photodetector with a detection peak at 10.4 μm
Chu, J., Li, Sheng S., Ho, PinVolume:
69
Year:
1996
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.117384
File:
PDF, 334 KB
english, 1996