Volume 69; Issue 9

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Applied Physics Letters
Volume 69; Issue 9

Applied Physics Letters

Volume 69; Issue 9

1

Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers

Kirstaedter, N., Schmidt, O. G., Ledentsov, N. N., Bimberg, D., Ustinov, V. M., Egorov, A. Yu., Zhukov, A. E., Maximov, M. V., Kopev, P. S., Alferov, Zh. I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 565 KB

english, 1996

2

Voltage shift and deformation in the hysteresis loop of Pb(Zr,Ti)O3 thin film by defects

Lee, Eun Gu, Wouters, Dirk J., Willems, Geert, Maes, Herman E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 315 KB

english, 1996

3

Real‐time scanning Hall probe microscopy

Oral, A., Bending, S. J., Henini, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 407 KB

english, 1996

4

Influence of the size dispersion on the emission spectra of the Si nanostructures

Khurgin, J. B., Forsythe, E. W., Tompa, G. S., Khan, B. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 309 KB

english, 1996

5

Deformation behavior of Zr65Al10Ni10Cu15 glassy alloy with wide supercooled liquid region

Kawamura, Yoshihito, Shibata, Tsutomu, Inoue, Akihisa, Masumoto, Tsuyoshi

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 373 KB

english, 1996

6

Elastic characterization of a supported porous silicon layer by Brillouin scattering

Andrews, G. T., Zuk, J., Kiefte, H., Clouter, M. J., Nossarzewska-Orlowska, E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 298 KB

english, 1996

7

Anisotropic magnetoresistance in tetragonal La1âxCaxMnOÎ´ thin films

Eckstein, J. N., Bozovic, I., OâDonnell, J., Onellion, M., Rzchowski, M. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 382 KB

english, 1996

8

Single charge and confinement effects in nano-crystal memories

Tiwari, Sandip, Rana, Farhan, Chan, Kevin, Shi, Leathen, Hanafi, Hussein

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 593 KB

english, 1996

9

Visible photo- and electroluminescence from electrochemically formed nanocrystalline Si thin film

Toyama, Toshihiko, Matsui, Tetsuyuki, Kurokawa, Yasuhito, Okamoto, Hiroaki, Hamakawa, Yoshihiro

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 406 KB

english, 1996

10

Correlation of real time spectroellipsometry and atomic force microscopy measurements of surface roughness on amorphous semiconductor thin films

Koh, Joohyun, Lu, Yiwei, Wronski, C. R., Kuang, Yalei, Collins, R. W., Tsong, T. T., Strausser, Y. E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 418 KB

english, 1996

11

Comment on ‘‘Effects of electron cyclotron resonance plasma thermal oxidation on the properties of polycrystalline silicon film’’ [Appl. Phys. Lett. 67, 1880 (1995)]

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 287 KB

english, 1996

12

Studies of the temporal and spectral shape of terahertz pulses generated from photoconducting switches

Ludwig, Christoph, Kuhl, Jürgen

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 261 KB

english, 1996

13

Mechanisms of recombination in GaN photodetectors

Binet, F., Duboz, J. Y., Rosencher, E., Scholz, F., Härle, V.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 236 KB

english, 1996

14

Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions

Ramsteiner, M., Menniger, J., Brandt, O., Yang, H., Ploog, K. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 346 KB

english, 1996

15

Quantitative study of interface roughness replication in multilayers using x-ray reflectivity and transmission electron microscopy

Chládek, M., Valvoda, V., Dorner, C., Holý, C., Grim, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 511 KB

english, 1996

16

A measurement of the electron-hole lifetimes in CdZnTe at 300 and 79 K using a pulsed x-ray microwave technique

Tepper, Gary, Losee, Jon

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 294 KB

english, 1996

17

Ultrafast interstitial injection during transient enhanced diffusion of boron in silicon

Huizing, H. G. A., Visser, C. C. G., Cowern, N. E. B., Stolk, P. A., de Kruif, R. C. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 321 KB

english, 1996

18

Fabrication of arrays of large step-free regions on Si(001)

Tanaka, So, Umbach, C. C., Blakely, Jack M., Tromp, Ruud M., Mankos, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 502 KB

english, 1996

19

A new compressively strained-layer p-type InGaAs/AlGaAs/GaAs step bound to miniband quantum well infrared photodetector with a detection peak at 10.4 μm

Chu, J., Li, Sheng S., Ho, Pin

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 334 KB

english, 1996

20

Measurement of electro-optic effects in single crystal films of N-(4-nitrophenyl)-L-prolinol

Xu, Jianjun, Zhou, Ligui, Thakur, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 314 KB

english, 1996

21

Degradation of liquid crystal device performance due to selective adsorption of ions

Perlmutter, S. H., Doroski, D., Moddel, G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 291 KB

english, 1996

22

Transistor-based evaluation of conduction-band offset in GaInP/GaAs heterojunction

Faleh, M. S., Tasselli, J., Bailbe, J. P., Marty, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 319 KB

english, 1996

23

Combined influence of design and carrier scattering on the ultrafast emission dynamics of quantum well microcavity lasers

Jahnke, F., Schneider, H. C., Koch, S. W.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 340 KB

english, 1996

24

Phase locked fluxon-antifluxon states in stacked Josephson junctions

Carapella, G., Costabile, G., Petraglia, A., Pedersen, N. F., Mygind, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 332 KB

english, 1996

25

Thermal nitridation enhanced diffusion of Sb and Si(100) doping superlattices

Mogi, T. K., Thompson, Michael O., Gossmann, H.-J., Poate, J. M., Luftman, H. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 323 KB

english, 1996

26

Identification of first and second layer aluminum atoms in dilute AlGaAs using cross-sectional scanning tunneling microscopy

Smith, Arthur R., Chao, Kuo-Jen, Shih, C. K., Anselm, K. A., Srinivasan, A., Streetman, B. G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 715 KB

english, 1996

27

Interaction of threading and misfit dislocations in a strained epitaxial layer

Schwarz, K. W., Tersoff, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 322 KB

english, 1996

28

Integrated YBa2Cu3O7 magnetometer with flux transformer and multiloop pick-up coil

Scharnweber, R., Schilling, M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 449 KB

english, 1996

29

Modification of desorption phenomenon of Sb on Si surfaces by atomic hydrogen termination

Nakagawa, Kiyokazu, Kimura, Yoshinobu, Miyao, Masanobu

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 334 KB

english, 1996

30

Rapid thermal annealing using the combustion of H2 with N2O

Sameshima, T., Sunaga, Y., Takashima, N., Tajima, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 327 KB

english, 1996

31

Photoreversible optical nonlinearities of polymeric films containing spiropyran with long alkyl chains

Tamaoki, Nobuyuki, Van Keuren, Edward, Matsuda, Hiro, Hasegawa, Kan, Yamaoka, Tsuguo

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 256 KB

english, 1996

32

Pulsed electroluminescence from organic bilayer light emitting diodes

Tak, Y. H., Pommerehne, J., Vestweber, H., Sander, R., Bässler, H., Hörhold, H. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 289 KB

english, 1996

33

Surface morphology effect on the photoresponse of high temperature superconducting microbridges

Chou, Hsiung, Chen, H. Z., Chen, Y. C., Lin, T. L., Chow, T. C., Wang, T. P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 413 KB

english, 1996

34

Fabrication and microscopic photoluminescence imaging of ridge-type InGaAs quantum wires grown on a (110) cleaved plane of AlGaAs/GaAs superlattice

Arakawa, T., Watabe, H., Nagamune, Y., Arakawa, Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 606 KB

english, 1996

35

Synthesis of ultrafine gallium nitride powder by the direct current arc plasma method

Li, H. D., Yang, H. B., Yu, S., Zou, G. T., Li, Y. D., Liu, S. Y., Yang, S. R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 322 KB

english, 1996

36

Dislocation velocity in GeSi alloy

Yonenaga, I., Sumino, Koji

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 304 KB

english, 1996

37

Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistors

Fan, Zhifang, Mohammad, S. N., Aktas, Ö., Botchkarev, A. E., Salvador, A., Morkoç, Hadis

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 267 KB

english, 1996

38

Void formation on ultrathin thermal silicon oxide films on the Si(100) surface

Wei, Yi, Wallace, Robert M., Seabaugh, Alan C.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 480 KB

english, 1996

39

Derivation of simplified analytic formulae for magneto-optical Kerr effects

You, Chun-Yeol, Shin, Sung-Chul

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 272 KB

english, 1996

40

Double-crystal x-ray diffraction from silicon film on insulator

Zhong, Lei, Hayashi, Kenro, Takeda, Ryuji

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 258 KB

english, 1996

41

Intrinsic optical properties of GaN epilayers grown on SiC substrates: Effect of the built-in strain

Buyanova, I. A., Bergman, J. P., Monemar, B., Amano, H., Akasaki, I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 252 KB

english, 1996

42

Current transport through single grain boundaries: A scanning tunneling potentiometry study

Schneider, M. A., Wenderoth, M., Heinrich, A. J., Rosentreter, M. A., Ulbrich, R. G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 388 KB

english, 1996

43

Photocurrent decay in n-type GaN thin films

Qiu, C. H., Melton, W., Leksono, M. W., Pankove, J. I., Keller, B. P., DenBaars, S. P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 318 KB

english, 1996

44

Advances in ultrafast scanning tunneling microscopy

Botkin, D., Glass, J., Chemla, D. S., Ogletree, D. F., Salmeron, M., Weiss, S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 834 KB

english, 1996

45

Spatially indirect radiative recombination of carriers localized in Si1−x−yGexCy/Si1−yCy double quantum well structure on Si substrates

Brunner, K., Winter, W., Eberl, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 356 KB

english, 1996

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