A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
Guo, J. D., Lin, C. I., Feng, M. S., Pan, F. M., Chi, G. C., Lee, C. T.Volume:
68
Year:
1996
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.116471
File:
PDF, 327 KB
english, 1996