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A bilayer Ti/Ag ohmic contact for highly doped n-type GaN...

A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films

Guo, J. D., Lin, C. I., Feng, M. S., Pan, F. M., Chi, G. C., Lee, C. T.
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Volume:
68
Year:
1996
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.116471
File:
PDF, 327 KB
english, 1996
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