Volume 68; Issue 2

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Applied Physics Letters
Volume 68; Issue 2

Applied Physics Letters

Volume 68; Issue 2

1

Ultrafast 1.55 μm all‐optical switching using low‐temperature‐grown multiple quantum wells

Takahashi, R., Kawamura, Y., Iwamura, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 291 KB

english, 1996

2

Coherent detection of freely propagating terahertz radiation by electro‐optic sampling

Nahata, Ajay, Auston, David H., Heinz, Tony F., Wu, Chengjiu

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 402 KB

english, 1996

3

Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs

Yang, H., Brandt, O., Wassermeier, M., Behrend, J., Schonherr, H. P., Ploog, K. H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 473 KB

english, 1996

4

Tunable phase locking of stacked Josephson flux‐flow oscillators

Goldobin, E., Kohlstedt, H., Ustinov, A. V.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 424 KB

english, 1996

5

Exciton localization and temperature stability in self‐organized InAs quantum dots

Lubyshev, D. I., Gonzalez‐Borrero, P. P., Marega, E., Petitprez, E., La Scala, N., Basmaji, P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 358 KB

english, 1996

6

Morphology and photoluminescence improvements from high-temperature rapid thermal annealing of GaN

Zolper, J. C., Hagerott Crawford, M., Howard, A. J., Ramer, J., Hersee, S. D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 390 KB

english, 1996

7

Near-field optical data storage

Terris, B. D., Mamin, H. J., Rugar, D.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 233 KB

english, 1996

8

Diffraction of surface acoustic waves on the zigzag domain wall in a Gd2(MoO4)3 crystal

Alexeyev, A. N., Roshchupkin, D. V.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 330 KB

english, 1996

9

Thermally poled silica glass: Laser induced pressure pulse probe of charge distribution

Kazansky, P. G., Smith, A. R., Russell, P. St. J., Yang, G. M., Sessler, G. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 240 KB

english, 1996

10

Broadband Bragg filter in microfabricated AlGaAs waveguides

Espindola, R. P., Udo, M. K., Chu, D. Y., Wu, S. L., Ho, S. T., Tiberio, R. C., Chapman, P. F., Hou, H. Q., Chang, T. Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 343 KB

english, 1996

11

Silicon interstitials: Injection during palladium silicide formation and trapping by ion implantation damage

Kringho̸j, Per

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 314 KB

english, 1996

12

White light emission from a polymer blend light emitting diode

Granström, Magnus, Inganäs, Olle

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 356 KB

english, 1996

13

Monoclinic phase of boron nitride appearing during the hexagonal cubic phase transition at high pressure and high temperature

Horiuchi, Shigeo, He, Lian-Long, Onoda, Mitsuko, Akaishi, Minoru

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 928 KB

english, 1996

14

A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films

Guo, J. D., Lin, C. I., Feng, M. S., Pan, F. M., Chi, G. C., Lee, C. T.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 327 KB

english, 1996

15

Precipitation behaviors of Cu and Fe on Frank-type partial dislocations in Czochralski-grown silicon

Shen, B., Zhang, R., Shi, Y., Zheng, Y. D., Sekiguchi, T., Sumino, K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 506 KB

english, 1996

16

Photoluminescence study of deep etched InGaAs/GaAs quantum wires and dots defined by low-voltage electron beam lithography

Steffen, R., Koch, Th., Oshinowo, J., Faller, F., Forchel, A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 399 KB

english, 1996

17

Electric field response of second order optical nonlinearity in dye doped poled polymer

Sugihara, Takashi, Haga, Hiroshi, Yamamoto, Sadahiko

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 308 KB

english, 1996

18

New near-infrared defect luminescence in GaN doped with vanadium by ion implantation

Kaufmann, B., Dörnen, A., Härle, V., Bolay, H., Scholz, F., Pensl, G.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 300 KB

english, 1996

19

Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature

Brown, A. S., Bhattacharya, P., Singh, J., Zaman, P., Sen, S., Turco, F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 386 KB

english, 1996

20

The director structure in smectic C-filled cells with strong surface anchoring

Ulrich, D. C., Elston, S. J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 352 KB

english, 1996

21

In situ arsenic-doped polycrystalline silicon as a low thermal budget emitter contact for Si/Si1−xGex heterojunction bipolar transistors

King, C. A., Johnson, R. W., Pinto, M. R., Luftman, H. S., Munanka, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 354 KB

english, 1996

22

Highly coupled dielectric behavior of porous ceramics embedding a polymer

Gómez Alvarez-Arenas, T. E., Montero de Espinosa, F.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 481 KB

english, 1996

23

High-modulation-depth and short-cavity-length silicon Fabry–Perot modulator with two grating Bragg reflectors

Liu, Mark Y., Chou, Stephen Y.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 416 KB

english, 1996

24

Magnetic coupling in amorphous Co–Dy–B and Fe–Dy–B alloys

Krishnan, R., Driouch, L., Kayzel, F. E., Franse, J. J. J. M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 298 KB

english, 1996

25

Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement

Nakamura, Y., Klein, D. L., Tsai, J. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 602 KB

english, 1996

26

Optoelectronic properties of hydrogenated amorphous silicon films grown using a modified pulsed plasma discharge

Mukherjee, C., Anandan, C., Seth, Tanay, Dixit, P. N., Bhattacharyya, R.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 339 KB

english, 1996

27

Self-focusing Rayleigh wave using a time reversal mirror

Ing, R. K., Fink, M., Casula, O.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 577 KB

english, 1996

28

Nanometer scale conductance change in a Langmuir-Blodgett film with the atomic force microscope

Yano, Koji, Kyogaku, Masafumi, Kuroda, Ryo, Shimada, Yasuhiro, Shido, Shunichi, Matsuda, Hiroshi, Takimoto, Kiyoshi, Albrecht, Otto, Eguchi, Ken, Nakagiri, Takashi

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 484 KB

english, 1996

29

Crystal structure and magnetic properties of LaCo10Al3

Guo, Yongquan, Liang, Jingkui, Tang, Weihua, Zhao, Yanming, Rao, Guanghui

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 260 KB

english, 1996

30

Emission dynamics of In0.2Ga0.8As/GaAs λ and 2λ microcavity lasers

Michler, P., Hilpert, M., Rühle, W. W., Wolf, H. D., Bernklau, D., Riechert, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 271 KB

english, 1996

31

Epitaxially oriented growth of diamond on silicon by hot filament chemical vapor deposition

Chen, Qijin, Wang, Li-Xin, Zhang, Ze, Yang, Jie, Lin, Zhangda

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 394 KB

english, 1996

32

Plasma-deposited silylation resist for 193 nm lithography

Horn, Mark W., Rothschild, Mordechai, Maxwell, Brian E., Goodman, Russell B., Kunz, Roderick R., Eriksen, Lynn M.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 334 KB

english, 1996

33

Electric breakdown in GaN p-n junctions

Dmitriev, V. A., Irvine, K. G., Carter, C. H., Kuznetsov, N. I., Kalinina, E. V.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 245 KB

english, 1996

34

Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride

Hirose, Y., Kahn, A., Aristov, V., Soukiassian, P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 267 KB

english, 1996

35

Magnetic phase transition in CeC2 crystals encapsulated in carbon nanocages

Yosida, Yositaka, Oguro, Isamu

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 250 KB

english, 1996

36

Epitaxial deposition and properties of Bi2Sr2CaCu2O8+δ/Bi2Sr2YCu2O8+δ/Bi2Sr2CaCu2 O+δ trilayers

Cucolo, A. M., Di Leo, R., Romano, P., Bacca, E., Gomez, M. E., Lopera, W., Prieto, P., Heiras, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 303 KB

english, 1996

37

Low temperature processing of Nb-doped Pb(Zr,Ti)O3 capacitors with La0.5Sr0.5CoO3 electrodes

Al-Shareef, H. N., Tuttle, B. A., Warren, W. L., Dimos, D., Raymond, M. V., Rodriguez, M. A.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 247 KB

english, 1996

38

Photoconductivity spectra for boron acceptors in Si1−xGex alloys

Shi, X. H., Liu, P. L., Chen, Z. H., Shen, S. C., Schilz, J.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 251 KB

english, 1996

39

2×106 cm2/V s electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine

Chui, H. C., Hammons, B. E., Harff, N. E., Simmons, J. A., Sherwin, M. E.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 258 KB

english, 1996

40

Si/Ge films on laterally structured surfaces: An x-ray study of conformal roughness

Tolan, M., Vacca, G., Sinha, S. K., Li, Z., Rafailovich, M. H., Sokolov, J., Lorenz, H., Kotthaus, J. P.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 313 KB

english, 1996

41

Space charge fields in photorefractive crystals in the presence of direct current and alternating current fields: A new resonance

Kalinin, V. A., Solymar, L.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 264 KB

english, 1996

42

Measurement of the refractive index of thin SiO2 films using tunneling current oscillations and ellipsometry

Hebert, K. J., Zafar, S., Irene, E. A., Kuehn, R., McCarthy, T. E., Demirlioglu, E. K.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 248 KB

english, 1996

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