Raman characterization of molecular-beam-epitaxy-grown...

Journal of Applied Physics 1989 Vol. 65; Iss. 5

Raman characterization of molecular-beam-epitaxy-grown GaAlSb on GaSb and GaAs substrates

Haines, Miles, Kerr, T., Newstead, S., Kirby, P. B.
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Volume:
65
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.342882
File:
PDF, 740 KB
english, 1989
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