Volume 65; Issue 5

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Journal of Applied Physics
Volume 65; Issue 5

Journal of Applied Physics

Volume 65; Issue 5

1

Simultaneous measurement of in‐material longitudinal and transverse particle velocity histories in a compression‐shear experiment

Aidun, John B., Gupta, Y. M.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 812 KB

english, 1989

2

Crystallized Si films by low-temperature rapid thermal annealing of amorphous silicon

Kakkad, R., Smith, J., Lau, W. S., Fonash, S. J., Kerns, R.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 713 KB

english, 1989

3

Application of isothermal current deep level transient spectroscopy to solar cells

Rancour, D. P., Pierret, R. F., Lundstrom, M. S., Melloch, M. R.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 598 KB

english, 1989

4

Thermal conductivity of a boron phosphide single-crystal wafer up to high temperature

Kumashiro, Y., Mitsuhashi, T., Okaya, S., Muta, F., Koshiro, T., Takahashi, Y., Mirabayashi, M.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 430 KB

english, 1989

5

The barrier height of Schottky diodes with a chemical-vapor-deposited diamond base

Hicks, M. C., Wronski, C. R., Grot, S. A., Gildenblat, G. Sh., Badzian, A. R., Badzian, T., Messier, R.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 553 KB

english, 1989

6

Charge trapping and mechanism of stimulated luminescence in CaS:Ce,Sm

Chakrabarti, K., Mathur, V. K., Thomas, L. A., Abbundi, R. J.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 651 KB

english, 1989

7

Electron attachment and ionization coefficients and electron drift velocities in BF3 and SiF4

Hunter, S. R., Carter, J. G., Christophorou, L. G.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 1.09 MB

english, 1989

8

Titanium dioxide dielectric films formed by rapid thermal oxidation

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 488 KB

english, 1989

9

Thermal magnetic noise in rf SQUIDS coupled to ferromagnetic cores

Prodi, G. A., Cerdonio, M., Vitale, S.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 927 KB

english, 1989

10

Mechanical properties of diamondlike carbon films

Hoshino, Shigeki, Fujii, Kazutaka, Shohata, Nobuaki, Yamaguchi, Hirotaka, Tsukamoto, Yuji, Yanagisawa, Masahiro

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 793 KB

english, 1989

11

Dual dielectric silicon metal-oxide-semiconductor field-effect transistors as radiation sensors

Hughes, R. C., Dawes, W. R., Meyer, W. J., Yoon, S. W.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 907 KB

english, 1989

12

Measurements of temporal and spatial characteristics of electrohydrodynamic instabilities

Pregenzer, Arian L., Woodworth, Joseph R.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 924 KB

english, 1989

13

Diffusive processes in the cross-field flow of intense plasma beams

Newberger, B., Rostoker, N.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 879 KB

english, 1989

14

Transient-grating study of amorphous As2S3 films

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 790 KB

english, 1989

15

Anomalous excitation-intensity dependence of photoluminescence properties of an asymmetric coupled quantum well structure

Tokuda, Yasunori, Kanamoto, Kyozo, Tsukada, Noriaki, Nakayama, Takashi

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 576 KB

english, 1989

16

Positive temperature coefficient of resistance in metal-semiconductor contacts

Ito, Kentaro, Fukami, Tatsuo

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 689 KB

english, 1989

17

Raman scattering study of the high-pressure oxidation of InP

Schwartz, G. P., Chakrabarti, U. K., Laudise, R. A., Caporaso, A. J.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 547 KB

english, 1989

18

Chemically homogeneous fine-grained Mn-Zn ferrites by spray drying

Kumar, K., Petrovich, A., Williams, C., VanderSande, J. B.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 601 KB

english, 1989

19

Raman characterization of molecular-beam-epitaxy-grown GaAlSb on GaSb and GaAs substrates

Haines, Miles, Kerr, T., Newstead, S., Kirby, P. B.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 740 KB

english, 1989

20

Fermi degeneracy and its effects on the open-circuit voltage of silicon solar cells

Morales-Acevedo, Arturo

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 543 KB

english, 1989

21

A study of the separative performance of an underexpanded jet interacting with background gas mixtures

Qian, Shao-Sheng, Muntz, E. P.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 1.11 MB

english, 1989

22

Effect of recrystallization conditions on linearity of Hall output voltage of an InSb element

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 851 KB

english, 1989

23

Theoretical study of electron-beam-heated carbon plasma C+++ emission

Whetstone, Shawn C., Kammash, Terry

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 596 KB

english, 1989

24

A Monte Carlo simulation of damage to the gate oxide of metal-oxide-silicon field-effect transistors from electron beam lithography

Cummings, K. D.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 971 KB

english, 1989

25

Magnetic shielding and relaxation characteristics of superconducting YBa2Cu3O7 tubes

Symko, O. G., Yeh, W. J., Zheng, D. J., Kulkarni, S.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 553 KB

english, 1989

26

AlGaAs epitaxial growth on (111)B substrates by metalorganic vapor-phase epitaxy

Kato, Kazutoshi, Hasumi, Yuji, Kozen, Atsuo, Temmyo, Jiro

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 747 KB

english, 1989

27

Phase separations of amorphous CoW films during oxidation and reactions with Si and Al

Wang, S. Q., Mayer, J. W.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 1.52 MB

english, 1989

28

Dose dependence of the silicon near-surface modifications caused by CF4 reactive ion-beam etching

Lejeune, C., Grandchamp, J. P., Gilles, J. P., Collard, E., Scheiblin, P.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 697 KB

english, 1989

29

Dynamic depth profile measurements of implanted deuterium in nickel

Petitpierre, O., Möller, W., Scherzer, B. M. U.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 789 KB

english, 1989

30

Optically detected magnetic resonance studies of donor-double-acceptor recombination processes in n-type GaP crystals

Ishikawa, Yukari, Hayashi, Yoshikazu, Itoh, Noriaki

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 960 KB

english, 1989

31

Optical absorption and phase transitions in CuInSe2 and CuInS2 single crystals at high pressure

González, J., Rincón, C.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 691 KB

english, 1989

32

Electronic structure and deep impurity levels in [111] GaAs/AlxGa1−xAs semiconductor superlattices

Ren, Shang Yuan, Dow, John D.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 1.23 MB

english, 1989

33

Titanium and carbon coimplantation into sintered α-SiC and hot-pressed Si3N4

Bhattacharya, R. S., Rai, A. K., Williams, J. M.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 625 KB

english, 1989

34

Sensitivity-enhanced electron holography and its application to magnetic recording investigations

Hasegawa, Shuji, Kawasaki, Takeshi, Endo, Junji, Tonomura, Akira, Honda, Yukio, Futamoto, Masaaki, Yoshida, Kazuetsu, Kugiya, Fumio, Koizumi, Makoto

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 895 KB

english, 1989

35

The role of damage in post-emission of electrons from cleavage surfaces of single-crystal LiF

Mathison, J. P., Langford, S. C., Dickinson, J. T.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 1.02 MB

english, 1989

36

Emission spectroscopy diagnostics of a magnetron sputter discharge

Cook, J. G., Das, S. R.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 933 KB

english, 1989

37

Low-temperature 3C-SiC heteroepitaxial film growth on Si by reactive-ion-beam deposition

Yamada, Hiroshi

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 975 KB

english, 1989

38

Magnetic properties of granular Co-polymer thin films

Laurent, C., Mauri, D., Kay, E., Parkin, S. S. P.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 760 KB

english, 1989

39

Low-temperature cadmium telluride homoepitaxy at high growth rates

Cody, N. W., Sudarsan, U., Solanki, R.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 735 KB

english, 1989

40

Molecular-beam-epitaxial growth and characterization of In2Te3

Golding, T. D., Boyd, P. R., Martinka, M., Amirtharaj, P. M., Dinan, J. H., Qadri, S. B., Zahn, D. R. T., Whitehouse, C. R.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 992 KB

english, 1989

41

Structural distortions of sputtered niobium nitride films

Cukauskas, E. J., Qadri, S. B., Carter, W. L.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 719 KB

english, 1989

42

A quantum chemical study on hydrogen radical reactions with methane and silane

Sato, Kota, Kojima, Kuniharu, Kawasaki, Masashi, Matsuzaki, Yoshio, Hirano, Tsuneo, Nakano, Masatake, Koinuma, Hideomi

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 466 KB

english, 1989

43

Full range analytic approximations for Fermi energy and Fermi–Dirac integral F−1/2 in terms of F1/2

Chang, T. Y., Izabelle, A.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 526 KB

english, 1989

44

Nature of the oscillatory surface smoothness and its consequence during molecular-beam epitaxy of strained layers: A computer simulation study

Ghaisas, S. V., Madhukar, A.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 803 KB

english, 1989

45

Influence of crack velocity thresholds on stabilized nonequilibrium fracture

Cook, Robert F.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 1.33 MB

english, 1989

46

An interface reaction mechanism for the dry oxidation of silicon

Moharir, S. S., Chandorkar, A. N., Vasi, J.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 598 KB

english, 1989

47

The effect of metal surface passivation on the Au-InP interaction

Fatemi, Navid S., Weizer, Victor G.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 1003 KB

english, 1989

48

Surface modification of a-Si:H with a scanning tunneling microscope operated in air

Jahanmir, J., West, P. E., Hsieh, S., Rhodin, T. N.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 812 KB

english, 1989

49

Optical switching in the semiconductor directional coupler with saturated gain

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 555 KB

english, 1989

50

A phenomenological model of switching in metal-thin insulator-semiconductor-semiconductor devices: A development of the analogy with the thyristor

Choi, W. K., De Lima, J. J., Owen, A. E., Reynolds, S.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 1.22 MB

english, 1989

51

Neuromagnetic localization performed by using planar gradiometer configurations

Bruno, A. C., Romani, G. L.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 718 KB

english, 1989

52

Current transport in a-Si:Ge alloy Schottky barriers

Sharma, D. K., Narasimhan, K. L., Kumar, Shailendra, Arora, B. M., Paul, W., Turner, W. A.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 661 KB

english, 1989

53

Growth of CdTe on GaAs by hot-wall epitaxy and its stress relaxation

Tatsuoka, H., Kuwabara, H., Fujiyasu, H., Nakanishi, Y.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 765 KB

english, 1989

54

Influence of the preepitaxial annealing and polycrystalline silicon deposition processes on oxygen precipitation and internal gettering in N/N+(100) epitaxial silicon wafers

Wijaranakula, W., Matlock, J. H.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 1002 KB

english, 1989

55

Organometallic vapor-phase-epitaxial growth and characterization of ZnGeAs2 on GaAs

Solomon, G. S., Timmons, M. L., Posthill, J. B.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 815 KB

english, 1989

56

Single-crystal YBa2Cu3O7 particle formation by aerosol decomposition

Kodas, Toivo, Datye, Abhaya, Lee, Victor, Engler, Edward

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 609 KB

english, 1989

57

Effects of a depth-dependent specimen potential on x-ray photoelectron spectroscopic data

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 840 KB

english, 1989

58

Consideration on the void generation mechanism in electron-beam recrystallized silicon-on-insulator films

Horita, Susumu, Ishiwara, Hiroshi

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 1.08 MB

english, 1989

59

Erratum: ‘‘Modeling for rf discharge characteristics’’ [J. Appl. Phys. 63,1022(1988)]

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 272 KB

english, 1989

60

Study of interdiffusion in a Te-doped AlAs-GaAs superlattice

Mei, P., Schwarz, S. A., Venkatesan, T., Schwartz, C. L., Colas, E.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 557 KB

english, 1989

61

A hydrodynamic model of plasma initiation off irradiated metallic aerosols in vacuum: The diffusive regime

Chitanvis, Shirish M.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 1.10 MB

english, 1989

62

A new analytical model for heterostructure field-effect transistors

Grinberg, A. A., Shur, M.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 710 KB

english, 1989

63

Study of the decomposition of wet SF6, subjected to 50-Hz ac corona discharges

Derdouri, A., Casanovas, J., Hergli, R., Grob, R., Mathieu, J.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 880 KB

english, 1989

64

Soft x-ray emission from double-pulse laser-produced plasma

Weber, R., Balmer, J. E.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 763 KB

english, 1989

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