Improved GaAs/Ga1−xAlxAs chemical beam epitaxy using triisopropylgallium
P.A. Lane, T. Martin, C.R. Whitehouse, R.W. Freer, M.R. Houlton, P.D.J. Calcott, D. Lee, A.D. Pitt, A.C. Jones, S. RushworthVolume:
17
Year:
1993
Language:
english
Pages:
6
DOI:
10.1016/0921-5107(93)90074-w
File:
PDF, 519 KB
english, 1993