Volume 17; Issue 1-3

Materials Science and Engineering: B

Volume 17; Issue 1-3

1

Editorial Board

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 38 KB

english, 1993

2

Preface

Y. Pauleau, G. Wahl

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 30 KB

english, 1993

3

Organizers and sponsors

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 39 KB

english, 1993

4

New metal-organic precursors for growth of GaAs and AlxGa1−xAs by chemical beam epitaxy

A.C. Jones, P.A. Lane, T. Martin, C.R. Whitehouse

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 699 KB

english, 1993

5

Metal-organic research in semiconductor epitaxy: ESPRIT II—MORSE project overview

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 537 KB

english, 1993

6

Improved GaAs/Ga1−xAlxAs chemical beam epitaxy using triisopropylgallium

P.A. Lane, T. Martin, C.R. Whitehouse, R.W. Freer, M.R. Houlton, P.D.J. Calcott, D. Lee, A.D. Pitt, A.C. Jones, S. Rushworth

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 519 KB

english, 1993

7

New alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III–V semiconductors: in-situ formation of AsH functionality by β elimination of specific metal-organic arsenic compounds

P. Gimmnich, A. Greiling, J. Lorberth, C. Thalmann, K. Rademann, G. Zimmermann, H. Protzmann, W. Stolz, E.O. Göbel

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 411 KB

english, 1993

8

New group III aluminium and gallium hydride precursors for metal-organic vapour-phase epitaxy

R. Dorn, M. Müller, J. Lorbeth, G. Zimmermann, H. Protzmann, W. Stolz, E.O. Göbel

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 327 KB

english, 1993

9

Selective epitaxial growth of In1−xAlxAs by metal-organic vapour-phase epitaxy

K. Shimoyama, Y. Inoue, K. Fujii, H. Gotoh

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 655 KB

english, 1993

10

A new organoindium precursor for electronic materials

V. Soulière, P. Abraham, M. Sacilotti, M.P. Berthet, J. Bouix, Y. Monteil, A.M. Pougnet, R. Mellet, A. Ougazzaden, A. Mircéa

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 463 KB

english, 1993

11

Growth kinetics during metal-organic chemical vapour deposition of ZnTe

H. Dumont, A. Marbeuf, J.-E. Bourée, O. Gorochov

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 359 KB

english, 1993

12

The selective epitaxial growth of silicon

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 2.53 MB

english, 1993

13

In-situ investigations of radical kinetics in the deposition of hydrogenated amorphous silicon films

Kunihide Tachibana

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 299 KB

english, 1993

14

Silicon deposited by low pressure chemical vapour deposition from Si2H6: experiments, modelling and properties

E. Scheid, J.J. Pedroviejo, P. Duverneuil, M. Gueye, J. Samitier, A. El Hassani, D. Bielle-Daspet

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 444 KB

english, 1993

15

Chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapor deposition with silane precursor

G. Jursich, K. Mulderink, W. Von Drasek

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 502 KB

english, 1993

16

Properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation

S. Koynov, R. Schwarz, T. Fischer, R. Schorer

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 423 KB

english, 1993

17

A new metal-organic chemical vapor deposition process for selective copper metallization

J.A.T. Norman, B.A. Muratore, P.N. Dyer, D.A. Roberts, A.K. Hochberg, L.H. Dubois

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 528 KB

english, 1993

18

Etching of copper and copper oxide at high rates via generation of volatile copper species

J. Farkas, K.-M. Chi, M.J. Hampden-Smith, T.T. Kodas, L.H. Dubois

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 397 KB

english, 1993

19

Preparation of copper and copper oxide films by metal-organic chemical vapour deposition using β-ketoiminato complexes

Tobias Gerfin, Michael Becht, Klaus-Hermann Dahmen

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 296 KB

english, 1993

20

Organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition

K. Bali, T. Szörényi, M.R. Brook, G.A. Shafeev, K.I. Grandberg

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 324 KB

english, 1993

21

Organometallic compounds: the chemist's contribution to new electronic materials

D. Blessmann, A. Gräfe, R. Heinen, F. Jansen, Th. Kruck, C. Terfloth

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 518 KB

english, 1993

22

Tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors

C.I.M.A. Spee, F. Verbeek, J.G. Kraaijkamp, J.L. Linden, T. Rutten, H. Delhaye, E.A. van der Zouwen, H.A. Meinema

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 358 KB

english, 1993

23

On the growth of epitaxial ultrathin films of α-Sn on CdTe(110)

Preben J. Møller, Adam Dittmar-Wituski

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 438 KB

english, 1993

24

Chemical vapour deposition precursors for metal silicides

R. Madar, N. Thomas, C. Bernard

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 534 KB

english, 1993

25

Synthesis of chromium silicide-silicon carbide composite powders

Ping Luo, Peter R. Strutt, Tongsan D. Xiao

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 601 KB

english, 1993

26

Chemical vapour deposition of tungsten in a UHV system: effect of substrate conditions on the initial stages of growth

Ulf Jansson, Jan-Otto Carlsson

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 591 KB

english, 1993

27

Studies on the nucleation and growth of chemical-vapor-deposited W on TiN substrates

Eui Song Kim, Chong Mu Lee, Jong Gil Lee, Ho Bin Im

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 528 KB

english, 1993

28

Mineral precursor for chemical vapor deposition of Rh metallic films

Pascal Doppelt, Valérie Weigel, Philippe Guinot

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 391 KB

english, 1993

29

Reaction diffusion in Ta/GaAs contacts

Q. Han, R. Schmid-Fetzer

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 572 KB

english, 1993

30

Microstructure and cracking in pure and substituted YBa2Cu3O7−δ

P. Diko, M. Ye, M. Mehbod, R. Deltour, I. Sargankova

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 816 KB

english, 1993

31

Optimizing metallo-organic chemical vapour deposition of YBCO films: substrates and Po2−T conditions

O.Yu. Gorbenko, A.R. Kaul, I.V. Pogosova, S.N. Polyakov, E.V. Kolosova, S.A. Pozigun, V.I. Scritny

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 497 KB

english, 1993

32

A model for low pressure chemical vapor deposition in a hot-wall tubular reactor

W.G. Houf, J.F. Grcar, W.G. Breiland

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 827 KB

english, 1993

33

Growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane

Roland A. Levy, James M. Grow

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 972 KB

english, 1993

34

Molecular simulation: a microscopic approach to study the growth of native silicon oxide

V.V. Pham, R. Razafindratsita, J.J. Simonne

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 267 KB

english, 1993

35

Silicon nitride elaborated by low pressure chemical vapour deposition from Si2H6 and NH3 at low temperature

E. Scheid, L.K. Kouassi, R. Henda, J. Samitier, J.R. Morante

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 426 KB

english, 1993

36

Heterogeneous systems based on precious metal powders and polymers

R. Kužel, J. Kubát, I. Křivka, J. Prokeš, O. Stefan, C. Klason

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 583 KB

english, 1993

37

Computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation

A. Virzi, M. Porrini

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 494 KB

english, 1993

38

Author index of volume 17

Journal:

Materials Science and Engineering: B

Year:

1993

File:

PDF, 51 KB

1993

39

Subject index of volume 17

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 389 KB

english, 1993

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