Extended defect evolution in boron-implanted Si during...

Applied Physics Letters 1990 Vol. 56; Iss. 13

Extended defect evolution in boron-implanted Si during rapid thermal annealing and its effects on the anomalous boron diffusion

Kim, Y. M., Lo, G. Q., Kwong, D. L., Tasch, A. F., Novak, S.
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Volume:
56
Year:
1990
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.102529
File:
PDF, 627 KB
english, 1990
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