Volume 56; Issue 13

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Applied Physics Letters
Volume 56; Issue 13

Applied Physics Letters

Volume 56; Issue 13

1

Band-gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP

Gaskill, D. K., Bottka, N., Aina, L., Mattingly, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 545 KB

english, 1990

2

Electrical and structural properties of Si/CrSi2/Si heterostructures fabricated using ion implantation

White, Alice E., Short, K. T., Eaglesham, D. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 653 KB

english, 1990

3

Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells

Khan, M. A., Skogman, R. A., Van Hove, J. M., Krishnankutty, S., Kolbas, R. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 539 KB

english, 1990

4

Redistribution of Zn in GaAs-AlGaAs heterojunction bipolar transistor structures

Hobson, W. S., Pearton, S. J., Jordan, A. S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 597 KB

english, 1990

5

Entropy measurements on slow Si/SiO2 interface states

Cobden, D. H., Uren, M. J., Kirton, M. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 632 KB

english, 1990

6

Strong magnetic field dependence of the critical currents correlated to the microstructure of YBaCuO ceramics

Dai, Uri, Deutscher, Guy, Lacour, Claude, Laher-Lacour, Francine, Mocaër, Philippe, Laguës, Michel

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 592 KB

english, 1990

7

Characterization of GaAs/Ga1−xAlxAs heterojunction bipolar transistor structures using photoreflectance

Yin, X., Pollak, Fred H., Pawlowicz, L., O’Neill, T., Hafizi, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 531 KB

english, 1990

8

Fabrication of a two-dimensional phased array of vertical-cavity surface-emitting lasers

Yoo, Hoi-Jun, Scherer, A., Harbison, J. P., Florez, L. T., Paek, E. G., Van der Gaag, B. P., Hayes, J. R., Von Lehmen, A., Kapon, E., Kwon, Young-Se

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 647 KB

english, 1990

9

InGaAs/InP graded-index quantum well lasers with nearly ideal static characteristics

Temkin, H., Tanbun-Ek, T., Logan, R. A., Lewis, J. A., Dutta, N. K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 586 KB

english, 1990

10

Demonstration of all-optical phase modulation in polydiacetylene waveguides

Thakur, M., Krol, D. M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 642 KB

english, 1990

11

Extended defect evolution in boron-implanted Si during rapid thermal annealing and its effects on the anomalous boron diffusion

Kim, Y. M., Lo, G. Q., Kwong, D. L., Tasch, A. F., Novak, S.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 627 KB

english, 1990

12

Nature of the band gap (direct versus indirect) of short-period (GaAs)n/(AlAs)n superlattices grown along the [111] confinement direction

Cingolani, R., Tapfer, L., Ploog, K.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 513 KB

english, 1990

13

Strained InGaAs/InP quantum well lasers

Temkin, H., Tanbun-Ek, T., Logan, R. A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 584 KB

english, 1990

14

Silicon vapor phase epitaxial growth catalysis by the presence of germane

Garone, P. M., Sturm, J. C., Schwartz, P. V., Schwarz, S. A., Wilkens, B. J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 532 KB

english, 1990

15

Structure at polymer interfaces determined by high-resolution nuclear reaction analysis

Chaturvedi, U. K., Steiner, U., Zak, O., Krausch, G., Schatz, G., Klein, J.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 612 KB

english, 1990

16

Structure of (√3×√3) R 30°-B at the Si interface studied by grazing incidence x-ray diffraction

Akimoto, Koichi, Hirosawa, Ichiro, Tatsumi, Toru, Hirayama, Hiroyuki, Mizuki, Jun’ichiro, Matsui, Junji

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 583 KB

english, 1990

17

Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures

Qiu, J., Qian, Q.-D., Gunshor, R. L., Kobayashi, M., Menke, D. R., Li, D., Otsuka, N.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 610 KB

english, 1990

18

Optical waveguiding and nonlinear optics in high quality 2-docosylamino-5-nitropyridine Langmuir–Blodgett films

Bosshard, Ch., Küpfer, M., Günter, P., Pasquier, C., Zahir, S., Seifert, M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 551 KB

english, 1990

19

Kinetics of HgX (B-X) formation due to collisions of Ar+2 ions with CH3HgX (X=Cl, Br, I) molecules related to blue-green laser emission

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 487 KB

english, 1990

20

Heavy carbon doping in metalorganic chemical vapor deposition for GaAs using a low V/III ratio

Kushibe, Mitsuhiro, Eguchi, Kazuhiro, Funamizu, Masahisa, Ohba, Yasuo

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 463 KB

english, 1990

21

GaInAsP/InP buried-heterostructure surface-emitting diode laser with monolithic integrated bifocal microlens

Liau, Z. L., Walpole, J. N., Missaggia, L. J., Mull, D. E.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 584 KB

english, 1990

22

Enhanced flux pinning by phase decomposition in Y-Ba-Cu-O

Jin, S., Tiefel, T. H., Nakahara, S., Graebner, J. E., O’Bryan, H. M., Fastnacht, R. A., Kammlott, G. W.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 576 KB

english, 1990

23

Deep level photoluminescence spectroscopy of CdTe epitaxial layer surfaces

Shaw, J. L., Brillson, L. J., Sivananthan, S., Faurie, J. P.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 533 KB

english, 1990

24

Optical phonon-assisted tunneling in double quantum well structures

Oberli, D. Y., Shah, Jagdeep, Damen, T. C., Kuo, J. M., Henry, J. E., Lary, Jenifer, Goodnick, Stephen M.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 531 KB

english, 1990

25

Large- and small-signal gain characteristics of 1.5 μm multiple quantum well optical amplifiers

Eisenstein, G., Koren, U., Raybon, G., Koch, T. L., Wiesenfeld, J. M., Wegener, M., Tucker, R. S., Miller, B. I.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 503 KB

english, 1990

26

Molecular beam epitaxy of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 on InAs substrates

Lott, J. A., Dawson, L. R., Jones, E. D., Klem, J. F.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 560 KB

english, 1990

27

Binary phase wave fronts reconstructed from internal reflection metal on glass holograms

Taghizadeh, M. R., Turunen, J., Vasara, A.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 496 KB

english, 1990

28

Eliminating channeling tail by lower dose preimplantation

Kase, Masataka, Kimura, Mami, Mori, Haruhisa, Ogawa, Tsutomu

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 479 KB

english, 1990

29

Carbon implantation in InGaAs and AlInAs

Pearton, S. J., Hobson, W. S., Kinsella, A. P., Kovalchick, J., Chakrabarti, U. K., Abernathy, C. R.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 593 KB

english, 1990

30

HgCdTe on GaAs/Si for mid-wavelength infrared focal plane arrays

Zanio, Ken, Bean, Ross, Mattson, Reed, Vu, Paul, Taylor, Scott, McIntyre, Dave, Ito, Chris, Chu, Muren

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 608 KB

english, 1990

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