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New suspended gate FET technology for physical deposition of chemically sensitive layers
H. Lorenz, M. Peschke, H. Riess, J. Janata, I. EiseleVolume:
23
Year:
1990
Language:
english
Pages:
4
DOI:
10.1016/0924-4247(90)87082-t
File:
PDF, 351 KB
english, 1990