Impurity (Si) concentration effects on radiation-induced...

Impurity (Si) concentration effects on radiation-induced deep traps in n-InP

Ando, K., Yamaguchi, M., Uemura, C.
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Volume:
55
Year:
1984
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.333017
File:
PDF, 415 KB
english, 1984
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