Volume 55; Issue 12

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Journal of Applied Physics
Volume 55; Issue 12

Journal of Applied Physics

Volume 55; Issue 12

1

Properties of hydrogenated amorphous silicon prepared by chemical vapor deposition

Ellis, F. B., Gordon, R. G., Paul, W., Yacobi, B. G.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 887 KB

english, 1984

2

Modeling of thin‐film solar cells: Nonuniform field

Crandall, Richard S.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 834 KB

english, 1984

3

Magnetic cooling near Curie temperatures above 300 K

Oesterreicher, H., Parker, F. T.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 627 KB

english, 1984

4

Space‐time correlation properties of the magnetization process and eddy current losses: Applications. I. Fine wall spacing

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 939 KB

english, 1984

5

The effect of pressure on the semiconductor-to-metal transition temperature in tin and in dilute Sn–Ge alloys

Vnuk, F., De Monte, A., Smith, R. W.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 558 KB

english, 1984

6

A simple model for impurity photoabsorption in silicon

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 441 KB

english, 1984

7

Exciton transport in optically excited AlxGa1−xAs-GaAs single quantum well

Le, H. Q., Lax, B., Maki, P. A., Palmateer, S. C., Eastman, L. F.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 749 KB

english, 1984

8

Mathematical model for a radioactive marker in silicide formation

Lien, C.-D., Nicolet, M-A.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 713 KB

english, 1984

9

Theoretical analysis of interacting dimers thermal desorption

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 526 KB

english, 1984

10

Intermetallic phases formed during tin implantation into iron and steels

Dionisio, P. H., de Barros, B. A. S., Baumvol, I. J. R.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 617 KB

english, 1984

11

Crystal site determination of dilute alloying elements in polycrystalline Nb3Sn superconductors using a transmission electron microscope

Tafto, J., Suenaga, M., Welch, D. O.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 518 KB

english, 1984

12

Mechanical properties of thin alloy films: Ultramicrohardness and internal stress

Dirks, A. G., van den Broek, J. J., Wierenga, P. E.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 881 KB

english, 1984

13

Impurity (Si) concentration effects on radiation-induced deep traps in n-InP

Ando, K., Yamaguchi, M., Uemura, C.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 415 KB

english, 1984

14

Surface conductivity measurements by a capacitive coupling technique

Dolgopolov, V., Mazuré, C., Zrenner, A., Koch, F.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 470 KB

english, 1984

15

Boron contamination in the intrinsic layers of amorphous silicon solar cells

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 529 KB

english, 1984

16

Observation of a new chromium-related complex in GaAs:Cr

Deveaud, B., Lambert, B., Picoli, G., Martinez, G.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 618 KB

english, 1984

17

Effects of surface states and of excitation on barrier heights in a simple model of a grain boundary or a surface

Landsberg, P. T., Abrahams, M. S.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 804 KB

english, 1984

18

Space-time correlation properties of the magnetization process and eddy current losses: Applications. II. Large wall spacing

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 878 KB

english, 1984

19

Phenomenological model for pisosecond-pulse laser annealing of semiconductors

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 867 KB

english, 1984

20

Deposition parameters and film properties of hydrogenated amorphous silicon prepared by high rate dc planar magnetron reactive sputtering

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 768 KB

english, 1984

21

Determination of the minority carrier mobility of n-type cadmium-mercury-telluride using the Haynes–Shockley method

Lacklison, D. E., Duggan, G.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 888 KB

english, 1984

22

Microstructural studies of CdTe and InSb films grown by molecular beam epitaxy

Wood, S., Greggi, J., Farrow, R. F. C., Takei, W. J., Shirland, F. A., Noreika, A. J.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 913 KB

english, 1984

23

Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds

d’Heurle, F., Petersson, C. S., Baglin, J. E. E., La Placa, S. J., Wong, C. Y.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 1.08 MB

english, 1984

24

Ion-beam-induced atomic mixing and amorphization in Ti/Ni bilayered thin films

Saito, K., Iwaki, M.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 512 KB

english, 1984

25

A numerical study of manganese redistribution in GaAs employing an interstitial-substitutional model

Jordan, A. S., Nikolakopoulou, G. A.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 1.37 MB

english, 1984

26

Applicability of the van der Pauw–Hall measurement technique to implanted samples

Iyer, Suman B., Nityananda, Rajaram, Kumar, Vikram

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 357 KB

english, 1984

27

Theoretical studies of the electric field distribution and open-circuit voltage of amorphous silicon-based alloy p-i-n solar cells

Hack, M., Shur, M. S.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 660 KB

english, 1984

28

Amorphous silicon produced by ion implantation: Effects of ion mass and thermal annealing

Waddell, C. N., Spitzer, W. G., Fredrickson, J. E., Hubler, G. K., Kennedy, T. A.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 695 KB

english, 1984

29

Mechanism and kinetics of tetrachlorosilane reactions in an argon-hydrogen microwave plasma

Mayo, N., Carmi, U., Rosenthal, I., Avni, R., Manory, R., Grill, A.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 891 KB

english, 1984

30

Mechanisms for lateral solute segregation in edge-defined film-fed crystal growth

Ettouney, Hisham M., Brown, Robert A.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 856 KB

english, 1984

31

An investigation of the two-dimensional shape of ion-implanted regions

Roitman, P., Albers, J., Myers, D. R.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 903 KB

english, 1984

32

Phase transformations in ion-mixed metastable (GaSb)1−x(Ge2)x semiconducting alloys

Cadien, K. C., Muddle, B. C., Greene, J. E.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 1.19 MB

english, 1984

33

Dynamics of capture from free-carrier tails in depletion regions and its consequences in junction experiments

Meijer, E., Grimmeiss, H. G., Ledebo, L-Å.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 855 KB

english, 1984

34

Relation between growth conditions and reconstruction on InAs during molecular beam epitaxy using an As2 source

Hancock, Bruce R., Kroemer, Herbert

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 598 KB

english, 1984

35

Platinum silicide contacts to silicon by lift-off

Cohen, S. S., Bower, D. H., Brown, D. M., Norton, J. F.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 811 KB

english, 1984

36

A single-crystal silicon thin film formed by secondary recrystallization

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 849 KB

english, 1984

37

Temperature dependence of the current in SiO2 in the high field tunneling regime

Ricco, B., Fischetti, M. V.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 827 KB

english, 1984

38

Rapid isothermal annealing of As-, P-, and B-implanted silicon

Wilson, S. R., Paulson, W. M., Gregory, R. B., Hamdi, A. H., McDaniel, F. D.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 838 KB

english, 1984

39

Stress effect in Au-Si Schottky diode doped with Cu

Tōyama, Naotake

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 645 KB

english, 1984

40

Impact ionization induced minority carrier injection by avalanching p-n junctions

Childs, P. A., Eccleston, W.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 552 KB

english, 1984

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